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Orsolya Kalman

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Published work

2 published item(s)

preprint2009arXiv

Quantum rings with time dependent spin-orbit coupling: Rabi oscillations, spintronic Schrodinger-cat states, and conductance properties

The strength of the (Rashba-type) spin-orbit coupling in mesoscopic semiconductor rings can be tuned with external gate voltages. Here we consider the case of a periodically changing spin-orbit interaction strength as induced by sinusoidal voltages. In a closed one dimensional quantum ring with weak spin-orbit coupling, Rabi oscillations are shown to appear. We find that the time evolution of initially localized wave packets exhibits a series of collapse and revival phenomena. Partial revivals -- that are typical in nonlinear systems -- are shown to correspond to superpositions of states localized at different spatial positions along the ring. These "spintronic Schrodinger-cat sates" appear periodically, and similarly to their counterparts in other physical systems, they are found to be sensitive to environment induced disturbances. The time dependent spin transport problem, when leads are attached to the ring, is also solved. We show that the "sideband currents" induced by the oscillating spin-orbit interaction strength can become the dominant output channel, even in the presence of moderate thermal fluctuations and random scattering events.

preprint2009arXiv

Stability of spintronic devices based on quantum ring networks

Transport properties in mesoscopic networks are investigated, where the strength of the (Rashba-type) spin-orbit coupling is assumed to be tuned with external gate voltages. We analyze in detail to what extent the ideal behavior and functionality of some promising network-based devices are modified by random (spin-dependent) scattering events and by thermal fluctuations. It is found that although the functionality of these devices is obviously based on the quantum coherence of the transmitted electrons, there is a certain stability: moderate level of errors can be tolerated. For mesoscopic networks made of typical semiconductor materials, even cryogenic temperatures can smear out the desired transport properties. When the energy distribution of the input carriers is narrow enough, it turns out that the devices can operate close to their ideal limits even at relative high temperature. As an example, we present results for two different networks: one that realizes a Stern-Gerlach device and another that simulates a spin quantum walker. Finally we propose a simple network that can act as a narrow band energy filter even in the presence of random scatterers.