Source author record

Omid Faizy Namarvar

Omid Faizy Namarvar appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall quant-ph

Catalog footprint

What is connected

4works

2topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2020arXiv

Electronic structure and quantum transport in twisted bilayer graphene with resonant scatterers

Staking layered materials revealed to be a very powerful method to tailor their electronic properties. It has indeed been theoretically and experimentally shown that twisted bilayers of graphene (tBLG) with a rotation angle $θ$, forming Moiré pattern, confine electrons in a tunable way as a function of $θ$. Here, we study electronic structure and transport in tBLG using tight-binding numerical calculations in commensurate twisted bilayer structures and a pertubative continuous theory, which is valid for not too small angles ($θ> \sim 2^\circ $). This two approaches allow to understand the effect of $θ$ on the local density of states, the electron lifetime due to disorder, the dc-conducitivity and the quantum correction of the conductivity due to multiple scattering effects. We distinguished the cases where disorder is equaly distributed in the two layer or only in one layer. When only one layer is disordered, diffusion properties depends strongly on $θ$, showing thus the effect of Moiré electronic localisation at intermediate angles, $\sim 2^\circ < θ< \sim 20^\circ$.

preprint2016arXiv

Electronic properties of asymmetrically doped twisted graphene bilayers

Rotated graphene bilayers form an exotic class of nanomaterials with fascinating electronic properties governed by the rotation angle theta. For large rotation angles, the electron eigenstates are restricted to one layer and the bilayer behaves like two decoupled graphene layer. At intermediate angles, Dirac cones are preserved but with a lower velocity and van Hove singularities are induced at energies where the two Dirac cones intersect. At very small angles, eigenstates become localized in peculiar moire zones. We analyse here the effect of an asymmetric doping for a series of commensurate rotated bilayers on the basis of tight binding calculations of their band dispersions, density of states, participation ratio and diffusive properties. While a small doping level preserves the theta dependence of the rotated bilayer electronic structure, larger doping induces a further reduction of the band velocity in the same way of to a further reduction of the rotation angle.

preprint2016arXiv

Parallel Quantum Circuit in a Tunnel Junction

The spectrum of 1-state and 2-states per line quantum buses is used to determine the effective $V_{ab}(N)$ electronic coupling between emitter and receiver states through the bus as a function of the number $N$ of parallel lines in the bus. When the calculation of $V_{ab}(N)$ is spectrally difficult, an Heisenberg-Rabi time dependent quantum exchange process can be triggered through the bus by preparing a specific initial non-stationanry state and identifying a target state to capture the effective oscillation frequency $Ω_{ab}(N)$ between those. For $Ω_{ab}(N)$ (for $V_{ab}(N)$), two different regimes are observed as a function of $N$: linear and $\sqrt{N}$ more moderate increases. This state preparation was remplaced by electronically coupling the quantum bus to two semi-infinite electrodes. The native quantum transduction process at work in this tunnel junction is not faithfully following the $Ω_{ab}(N)$ variations with $N$. Due to normalisation to unity of the electronic transparency of the quantum bus and to the low pass filter character of the transduction, large $Ω_{ab}(N)$ cannot be followed by the tunnel junction. At low coupling and when $N$ is small enough not to compensate the small through line coupling, an $N^2$ power law is preserved for $Ω_{ab}(N)$. The limitations of the quantum transduction in a tunnel junction is pointing how the broadly used concept of electrical contact between a metallic nanopad and a molecular wire can be better described as a quantum transduction process.

preprint2014arXiv

Fano Interference between a STM Tip and Mid Gap States in Graphene

We analyze the STM current through electronic resonances on a substrate as a function of tip-surface distance. We show that when the tip approaches the surface a Fano hybridization can occur between the electronic resonance on the substrate and the continuum of conduction states in the STM tip. A maximum of the density of states of the electronic resonance at some energy can then lead to a dip of the STM signal $dI/dV$. Resonances in graphene, known as mid gap states, are good candidates to produce this type of Fano interference. The mid gap states can be produced by local defects or adsorbates and we analyze the cases of top and hollow configurations of adsorbates.