Researcher profile

Olle Inganäs

Olle Inganäs contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2014arXiv

Intermodulation electrostatic force microscopy for imaging surface photo-voltage

We demonstrate an alternative to Kelvin Probe Force Microscopy for imaging surface potential. The open-loop, single-pass technique applies a low-frequency AC voltage to the atomic force microscopy tip while driving the cantilever near its resonance frequency. Frequency mixing due to the nonlinear capacitance gives intermodulation products of the two drive frequencies near the cantilever resonance, where they are measured with high signal to noise ratio. Analysis of this intermodulation response allows for quantitative reconstruction of the contact potential difference. We derive the theory of the method, validate it with numerical simulation and a control experiment, and we demonstrate its utility for fast imaging of the surface photo-voltage on an organic photo-voltaic material.

preprint2010arXiv

Charge Carrier Extraction by Linearly Increasing Voltage:Analytic framework and ambipolar transients

Up to now the basic theoretical description of charge extraction by linearly increasing voltage (CELIV) is solved for a low conductivity approximation only. Here we present the full analytical solution, thus generalize the theoretical framework for this method. We compare the analytical solution and the approximated theory, showing that especially for typical organic solar cell materials the latter approach has a very limited validity. Photo-CELIV measurements on poly(3-hexyl thiophene-2,5-diyl):[6,6]-phenyl-C61 butyric acid methyl ester based solar cells were then evaluated by fitting the current transients to the analytical solution. We found that the fit results are in a very good agreement with the experimental observations, if ambipolar transport is taken into account, the origin of which we will discuss. Furthermore we present parametric equations for the mobility and the charge carrier density, which can be applied over the entire experimental range of parameters.