Researcher profile

Olav Hellwig

Olav Hellwig contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2022arXiv

Control and tunability of magnetic bubble states in multilayers with strong perpendicular magnetic anisotropy at ambient conditions

The reversal of magnetic bubble helicity through topologically trivial transient states provides an additional degree of freedom that promises the development of multidimensional magnetic memories. A key requirement for this concept is the stabilization of bubble states at ambient conditions on application-compatible substrates. In the present work we demonstrate a stabilization routine for remanent bubble states in high perpendicular magnetic anisotropy [(Co(0.44\,nm)/Pt(0.7\,nm)]$_X$, X = 48, 100, 150 multilayers on Si/SiO$_2$ substrates by exploring the effect of external magnetic fields ($H_\mathrm{m}$) of different strength and angles ($θ$) with respect to the film surface normal. By systematic variation of these two parameters, we demonstrate that remanent bubble density and mean bubble diameter can be carefully tuned and optimized for each sample. Our protocol based on magnetometry only reveals the densest remanent bubble states at $H_\mathrm{m} = 0.87 H_\mathrm{s}$ ($H_\mathrm{s}$ is the magnetic saturation field) and $θ=60^\circ - 75^\circ$ for all $X$ with a maximum of 3736 domains/100 $μ$m$^2$ for the X = 48 sample. The experimental observations are supported by micromagnetic simulations taking into account the nanoscale lateral grain structure of multilayers synthesized by magnetron sputter deposition, and thus helping understand the different density of the bubble states found in these systems.

preprint2021arXiv

State-resolved ultrafast charge and spin dynamics in [Co/Pd] multilayers

We use transient absorption spectroscopy with circularly polarized x-rays to detect laser-excited hole states below the Fermi level and compare their dynamics with that of unoccupied states above the Fermi level in ferromagnetic [Co/Pd] multilayers. While below the Fermi level an instantaneous and significantly stronger demagnetization is observed, above the Fermi level the demagnetization is delayed by 35+/-10 fs. This provides a direct visualization of how ultrafast demagnetization proceeds via initial spin-flip scattering of laser-excited holes to the subsequent formation of spin waves.

preprint2021arXiv

Terahertz charge and spin transport in metallic ferromagnets: the role of crystalline and magnetic order

We study the charge and spin dependent scattering in a set of CoFeB thin films whose crystalline order is systematically enhanced and controlled by annealing at increasingly higher temperatures. Terahertz conductivity measurements reveal that charge transport closely follows the development of the crystalline phase, with increasing structural order leading to higher conductivity. The terahertz-induced ultrafast demagnetization, driven by spin-flip scattering mediated by the spin-orbit interaction, is measurable in the pristine amorphous sample and much reduced in the sample with highest crystalline order. Surprisingly, the largest demagnetization is observed at intermediate annealing temperatures, where the enhancement in spin-flip probability is not associated with an increased charge scattering. We are able to correlate the demagnetization amplitude with the magnitude of the in-plane magnetic anisotropy, which we characterize independently, suggesting a magnetoresistance-like description of the phenomenon.

preprint2020arXiv

Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces

Interfaces separating ferromagnetic (FM) layers from non-ferromagnetic layers offer unique properties due to spin-orbit coupling and symmetry breaking, yielding effects such as exchange bias, perpendicular magnetic anisotropy, spin-pumping, spin-transfer torques, conversion between charge and spin currents and vice-versa. These interfacial phenomena play crucial roles for magnetic data storage and transfer applications, which require forming FM nano-structures embedded in non-ferromagnetic matrices. Here, we investigate the possiblity of creating such nano-structures by ion-irradiation. We study the effect of lateral confinement on the ion-irradiation-induced reduction of non-magnetic metal oxides (e.g., antiferro- or paramagnetic) to form ferromagnetic metals. Our findings are later exploited to form 3-dimensional magnetic interfaces between Co, CoO and Pt by spatially-selective irradiation of CoO/Pt multilayers. We demonstrate that the mechanical displacement of the O atoms plays a crucial role during the reduction from insulating, non-ferromagnetic cobalt oxides to metallic cobalt. Metallic cobalt yields both perpendicular magnetic anisotropy in the generated Co/Pt nano-structures, and, at low temperatures, exchange bias at vertical interfaces between Co and CoO. If pushed to the limit of ion-irradiation technology, this approach could, in principle, enable the creation of densely-packed, atomic scale ferromagnetic point-contact spin-torque oscillator (STO) networks, or conductive channels for current-confined-path based current perpendicular-to-plane giant magnetoresistance read-heads.

preprint2020arXiv

Topological Hall effect in single thick SrRuO3 layers induced by defect engineering

The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultra-thin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by introducing defects. In this study THE is observed in 60 nm thick SRO films, in which defects and lattice distortions are introduced by helium ion irradiation. The irradiated SRO films exhibit a pronounced THE in a wide temperature range from 5 K to 80 K. These observations can be attributed to the emergence of Dzyaloshinskii-Moriya interaction as a result of artificial inversion symmetry breaking associated to the lattice defect engineering. The creation and control of the THE in oxide single layers can be realized by ex situ film processing. Therefore, this work provides new insights into the THE and illustrates a promising strategy to design novel spintronics devices.

preprint2019arXiv

Ultrafast X-Ray Induced Changes of the Electronic and Magnetic Response of Solids Due to Valence Electron Redistribution

We report a novel mechanism, consisting of redistribution of valence electrons near the Fermi level, during interactions of intense femtosecond X-ray pulses with a Co/Pd multilayer. The changes in Co 3d valence shell occupation were directly revealed by fluence-dependent changes of the Co L$_3$ X-ray absorption and magnetic circular dichroism spectra near the excitation threshold. The valence shell redistribution arises from inelastic scattering of high energy Auger electrons and photoelectrons that lead to transient holes below and electrons above the Fermi level on the femtosecond time scale. The valence electron reshuffling effect scales with the energy deposited by X-rays and within 17 fs extends to valence states within 2 eV of the Fermi level. As a consequence the sample demagnetizes by more than twenty percent due to magnon generation.