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O. Heinonen

O. Heinonen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2022arXiv

Collective ferromagnetism of artificial square spin ice

We have studied the temperature and magnetic field dependence of the total magnetic moment of large-area permalloy artificial square spin ice arrays. The temperature dependence and hysteresis behavior are consistent with the coherent magnetization reversal expected in the Stoner-Wohlfarth model, with clear deviations due to inter-island interactions at small lattice spacing. Through micromagnetic simulations, we explore this behavior and demonstrate that the deviations result from increasingly complex magnetization reversal at small lattice spacing, induced by inter-island interactions, and depending critically on details of the island shapes. These results establish new means to tune the physical properties of artificial spin ice structures and other interacting nanomagnet systems, such as patterned magnetic media.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Magnetic ground states of a model for (TM)Nb$_3$S$_6$, TM=Co, Fe, Ni

The transition-metal intercalated dichalcogenide CoNb$_3$S$_6$ is a triangular antiferromagnet that has recently been shown to exhibit a large anomalous Hall effect (AHE) below the Néel temperature, even though the response to an external field is very small. This suggests that there is an interesting magnetic structure that interacts with the electronic structure to yield the AHE, as collinear antiferromagnets cannot exhibit a nonzero AHE. We propose a model for magnetic transition-metal intercalated dichalcogenides and examine its ground state as function of interaction parameters. The model exhibits transitions between planar spin spirals, non-planar spin spirals, and a particular non-coplanar so-called $3q$ state. This latter state must exhibit a nonzero AHE, while the spin spirals do not.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Topological response of the anomalous Hall effect in MnBi2Te4 due to magnetic canting

Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecular beam epitaxy allows us to obtain a large-area quasi-3D 24-layer MnBi2Te4 with near-perfect compensation that hosts the phase diagram observed in bulk which we utilize to probe the AHE. This AHE is seen to exhibit an antiferromagnetic response at low magnetic fields, and a clear evolution at intermediate fields through surface and bulk spin-flop transitions into saturation. Throughout this evolution, the AHE is super-linear versus magnetization rather than the expected linear relationship. We reveal that this discrepancy is related to the canting angle, consistent with the symmetry of the crystal. Our findings suggests that novel topological responses may be found in non-collinear ferromagnetic, and antiferromagnetic phases.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Controllable skyrmion chirality in ferroelectrics

Chirality, an intrinsic handedness, is one of the most intriguing fundamental phenomena in nature. Materials composed of chiral molecules find broad applications in areas ranging from nonlinear optics and spintronics to biology and pharmaceuticals. However, chirality is usually an invariable inherent property of a given material that cannot be easily changed at will. Here, we demonstrate that ferroelectric nanodots support skyrmions the chirality of which can be controlled and switched. We devise protocols for realizing control and efficient manipulations of the different types of skyrmions. Our findings open the route for controlled chirality with potential applications in ferroelectric-based information technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Dynamic response of an artificial square spin ice

Magnetization dynamics in an artificial square spin-ice lattice made of Ni80Fe20 with magnetic field applied in the lattice plane is investigated by broadband ferromagnetic resonance spectroscopy. The experimentally observed dispersion shows a rich spectrum of modes corresponding to different magnetization states. These magnetization states are determined by exchange and dipolar interaction between individual islands, as is confirmed by a semianalytical model. In the low field regime below 400 Oe a hysteretic behavior in the mode spectrum is found. Micromagnetic simulations reveal that the origin of the observed spectra is due to the initialization of different magnetization states of individual nanomagnets. Our results indicate that it might be possible to determine the spin-ice state by resonance experiments and are a first step towards the understanding of artificial geometrically frustrated magnetic systems in the high-frequency regime.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

The effect of Ta oxygen scavenger layer on HfO$_2$-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport

Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access memories. While recent experimental work has shown that inserting a metallic "oxygen scavenger layer" between the positive electrode and oxide improves device performance, the fundamental understanding of how the scavenger layer modifies heterostructure properties is lacking. We use density functional theory to calculate thermodynamic properties and conductance of TiN/HfO$_2$/TiN heterostructures with and without Ta scavenger layer. First, we show that Ta insertion lowers the formation energy of low-resistance states. Second, while the Ta scavenger layer reduces the Schottky barrier height in the high-resistance state by modifying the interface charge at the oxide-electrode interface, the heterostructure maintains a high resistance ratio between high- and low-resistance states. Finally, we show that the low-bias conductance of device on-states becomes much less sensitive to the spatial distribution of oxygen removed from the HfO$_2$ in the presence of the Ta layer. By providing fundamental understanding of the observed improvements with scavenger layers, we open a path to engineer interfaces with oxygen scavenger layers to control and enhance device performance. In turn, this may enable the realization of a non-volatile low-power memory technology with concomitant reduction in energy consumption by consumer electronics and significant benefits to society.

0 citations0 reviewsNo code linkedOpen access