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Researcher profile

O. Fruchart

O. Fruchart contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2022arXiv

Micromagnetics of magnetic chemical modulations in soft-magnetic cylindrical nanowires

We analyze the micromagnetics of short longitudinal modulations of a high-magnetization material in cylindrical nanowires made of a soft-magnetic material of lower magnetization such as permalloy, combining magnetic microscopy, analytical modeling, and micromagnetic simulations. The mismatch of magnetization induces curling of magnetization around the axis in the modulations, in an attempt to screen the interfacial magnetic charges. The curling angle increases with modulation length, until a plateau is reached with nearly full charge screening for a specific length scale~$Δ_\mathrm{mod}$, larger than the dipolar exchange length of any of the two materials. The curling circulation can be switched by the Oersted field arising from a charge current with typical magnitude $10^{12} A/m^{2}$ for a diameter of $\sim$100 nm, and reaching a maximum for $Δ_\mathrm{mod}$.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Mechanism of current-assisted Bloch-point wall stabilization for ultra fast dynamics

Two types of domain walls exist in magnetically soft cylindrical nanowires: the transverse-vortex wall (TVW) and the Bloch-point wall (BPW). The latter is expected to prevent the usual Walker breakdown, and thus enable high domain wall speed. We showed recently [M. Schöbitz \etal, Phys. Rev. Lett. 123, 217201 (2019)] that the previously overlooked OErsted field associated with an electric current is a key in experiments to stabilize the BPW and reach speed above 600 m/s with spin-transfer. Here, we investigate in detail this situation with micromagnetic simulations and modeling. The switching of the azimuthal circulation of the BPW to match that of the OErsted field occurs above a threshold current scaling with $1/R^3$ ($R$ is the wire radius), through mechanisms that may involve the nucleation and/or annihilation of Bloch points. The domain wall dynamics then remains of a below-Walker type, with speed largely determined by spin-transfer torque alone.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Room temperature skyrmions at zero field in exchange-biased ultrathin films

We demonstrate that magnetic skyrmions with a mean diameter around 60 nm can be stabilized at room temperature and zero external magnetic field in an exchange-biased Pt/Co/NiFe/IrMn multilayer stack. This is achieved through an advanced optimization of the multilayer stack composition in order to balance the different magnetic energies controlling the skyrmion size and stability. Magnetic imaging is performed both with magnetic force microscopy and scanning Nitrogen-Vacancy magnetometry, the latter providing unambiguous measurements at zero external magnetic field. In such samples, we show that exchange bias provides an immunity of the skyrmion spin texture to moderate external magnetic field, in the tens of mT range, which is an important feature for applications as memory devices. These results establish exchange-biased multilayer stacks as a promising platform towards the effective realization of memory and logic devices based on magnetic skyrmions.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Domain wall pinning in a circular cross-section wire with modulated diameter

Domain wall propagation in cylindrical nanowires with modulations of diameter is a key phenomenon to design physics-oriented devices, or a disruptive three-dimensional magnetic memory. This chapter presents a combination of analytical modelling and micromagnetic simulations, with the aim to present a comprehensive panorama of the physics of pinning of domain walls at modulations, when moved under the stimulus of a magnetic field or a spin-polarized current. For the sake of considering simple physics, we consider diameters of a few tens of nanometers at most, and accordingly domain walls of transverse type. Modeling with suitable approximations provides simple scaling laws, while simulations are more accurate, refining the results and defining the range of validity of the models. While pinning increases with the relative change of diameter, a key feature is the much larger efficiency of pinning at an increase of diameter upon considering current rather than field, due to the drastic decrease of current density related to the increase of diameter.

0 citations0 reviewsNo code linkedOpen access