Researcher profile

Nuala Mai Caffrey

Nuala Mai Caffrey contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2013arXiv

Graphene-mediated exchange coupling between cobaltocene and magnetic substrates

Using first-principles calculations we demonstrate sizable exchange coupling between a magnetic molecule and a magnetic substrate via a graphene layer. As a model system we consider cobaltocene (CoCp$_2$) adsorbed on graphene deposited on Ni(111). We find that the magnetic coupling between the molecule and the substrate is antiferromagnetic and varies considerably depending on the molecule structure, the adsorption geometry, and the stacking of graphene on Ni(111). We show how this coupling can be tuned by intercalating a magnetic monolayer, e.g. Fe or Co, between graphene and Ni(111). We identify the leading mechanism responsible for the coupling to be the spatial and energy matching of the frontier orbitals of CoCp$_2$ and graphene close to the Fermi level, and we demonstrate the role of graphene as an electronic decoupling layer, yet allowing spin communication between molecule and substrate.

preprint2012arXiv

Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction

We demonstrate with first-principles electron transport calculations that large tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) effects can coexist in an all-oxide device. The TMR originates from the symmetry-driven spin filtering provided by the insulating BaTiO3 barrier to the electrons injected from SrRuO3. In contrast the TER is possible only when a thin SrTiO3 layer is intercalated at one of the SrRuO3/BaTiO3 interfaces. As the complex band-structure of SrTiO3 has the same symmetry than that of BaTiO3, the inclusion of such an intercalated layer does not negatively alter the TMR and in fact increases it. Crucially, the magnitude of the TER also scales with the thickness of the SrTiO3 layer. The SrTiO3 thickness becomes then a single control parameter for both the TMR and the TER effect. This protocol offers a practical way to the fabrication of four-state memory cells.