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Normand Mousseau

Normand Mousseau appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.comp-phcond-mat.dis-nncond-mat.stat-mechphysics.chem-ph

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Published work

11 published item(s)

preprint2016arXiv

Insights on finite size effects in Ab-initio study of CO adsorption and dissociation on Fe 110 surface

Adsorption and dissociation of hydrocarbons on metallic surfaces represent crucial steps to carburization of metal. Here, we use density functional theory total energy calculations with the climbing-image nudged elastic band method to estimate the adsorption energies and dissociation barriers for different CO coverages with surface supercells of different sizes. For the absorption of CO, the contribution from van der Waals interaction in the computation of adsorption parameters is found important in small systems with high CO-coverages. The dissociation process involves carbon insertion into the Fe surface causing a lattice deformation that requires a larger surface system for unrestricted relaxation. We show that, in larger surface systems associated with dilute CO-coverages, the dissociation barrier is significantly decreased. The elastic deformation of the surface is generic and can potentially applicable for all similar metal-hydrocarbon reactions and therefore a dilute coverage is necessary for the simulation of these reactions as isolated processes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Strong long-range relaxations of structural defects in graphene simulated using a new semi-empirical potential

We present a new semi-empirical potential for graphene, which includes also an out-of-plane energy term. This novel potential is developed from density functional theory (DFT) calculations for small numbers of atoms, and can be used for configurations with millions of atoms. Our simulations show that buckling caused by typical defects such as the Stone-Wales (SW) defect extends to hundreds of nanometers. Surprisingly, this long-range relaxation lowers the defect formation energy dramatically - by a factor of $2$ or $3$ - implying that previously published DFT-calculated defect formation energies suffer from large systematic errors. We also show the applicability of the novel potential to other long-range defects including line dislocations and grain boundaries, all of which exhibit pronounced out-of-plane relaxations. We show that the energy as a function of dislocation separation diverges logarithmically for flat graphene, but converges to a constant for free standing buckled graphene. A potential in which the atoms are attracted to the 2D plane restores the logarithmic behaviour of the energy. Future simulations employing this potential will elucidate the influence of the typical long-range buckling and rippling on the physical properties of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Probing potential energy surface exploration strategies for complex systems

The efficiency of minimum-energy configuration searching algorithms is closely linked to the energy landscape structure of complex systems. Here we characterize this structure by following the time evolution of two systems, vacancy aggregation in Fe and energy relaxation in ion-bombarded c-Si, using the kinetic Activation-Relaxation Technique (k-ART), an off-lattice kinetic Monte Carlo (KMC) method, and the well-known Bell-Evans-Polanyi (BEP) principle. We also compare the efficiency of two methods for handling non-diffusive flickering states -- an exact solution and a Tabu-like approach that blocks already visited states. Comparing these various simulations allow us to confirm that the BEP principle does not hold for complex system since forward and reverse energy barriers are completely uncorrelated. This means that following the lowest available energy barrier, even after removing the flickering states, leads to rapid trapping: relaxing complex systems requires crossing high-energy barriers in order to access new energy basins, in agreement with the recently proposed replenish-and-relax model [Béland et al., PRL 111, 105502 (2013)] This can be done by forcing the system through these barriers with Tabu-like methods. Interestingly, we find that following the fundamental kinetics of a system, though standard KMC approach, is at least as efficient as these brute-force methods while providing the correct kinetics information.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Strain effect and intermixing at the Si surface: A hybrid quantum and molecular mechanics study

We investigate Ge mixing at the Si(001) surface and characterize the $2\times N$ Si(001) reconstruction by means of hybrid quantum and molecular mechanics calculations (QM/MM). Avoiding fake elastic dampening, this scheme allows to correctly take into account long range deformation induced by reconstruted and defective surfaces. We focus in particular on the dimer vacancy line (DVL) and its interaction with Ge adatoms. We first show that calculated formation energies for these defects are highly dependent on the choice of chemical potential and that the latter must be chosen carefully. Characterizing the effect of the DVL on the deformation field, we also find that the DVL favors Ge segregation in the fourth layer close to the DVL. Using the activation-relaxation technique (ART nouveau) and QM/MM, we show that a complex diffusion path permits the substitution of the Ge atom in the fourth layer, with barriers compatible with mixing observed at intermediate temperature.

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preprint2014arXiv

Understanding long-time vacancy aggregation in iron: a kinetic activation-relaxation technique study

Vacancy diffusion and clustering processes in body-centered-cubic (bcc) Fe are studied using the kinetic activation-relaxation technique (k-ART), an off-lattice kinetic Monte Carlo method with on-the-fly catalog building capabilities. For monovacancies and divacancies, k-ART recovers previously published results while clustering in a 50-vacancy simulation box agrees with experimental estimates. Applying k-ART to the study of clustering pathways for systems containing from one to six vacancies, we find a rich set of diffusion mechanisms. In particular, we show that the path followed to reach a hexavacancy cluster influences greatly the associated mean-square displacement. Aggregation in a 50-vacancy box also shows a notable dispersion in relaxation time associated with effective barriers varying from 0.84 to 1.1 eV depending on the exact pathway selected. We isolate the effects of long-range elastic interactions between defects by comparing to simulations where those effects are deliberately suppressed. This allows us to demonstrate that in bcc Fe, suppressing long-range interactions mainly influences kinetics in the first 0.3 ms, slowing down quick energy release cascades seen more frequently in full simulations, whereas long-term behavior and final state are not significantly affected.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Replenish and relax: explaining logarithmic annealing in disordered materials

Fatigue and aging of materials are, in large part, determined by the evolution of the atomic-scale structure in response to strains and perturbations. This coupling between microscopic structure and long time scales remains one of the main challenges in materials study. Focusing on a model system, ion-damaged crystalline silicon, we combine nanocalorimetric experiments with an off-lattice kinetic Monte Carlo simulation to identify the atomistic mechanisms responsible for the structural relaxation over long time scales. We relate the logarithmic relaxation, observed in a number of systems, with heat-release measurements. The microscopic mechanism associated with logarithmic relaxation can be described as a two-step replenish and relax process. As the system relaxes, it reaches deeper energy states with logarithmically growing barriers that need to be unlocked to replenish the heat-releasing events leading to lower energy configurations.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Tunable magnetic states in h-BN sheets

Magnetism in 2D atomic sheets has attracted considerable interest as its existence could allow the development of electronic and spintronic devices. The existence of magnetism is not sufficient for devices, however, as states must be addressable and modifiable through the application of an external drive. We show that defects in hexagonal boron nitride present a strong interplay between the the N-N distance in the edge and the magnetic moments of the defects. By stress-induced geometry modifications, we change the ground state magnetic moment of the defects. This control is made possible by the triangular shape of the defects as well as the strong spin localisation in the magnetic state.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Amorphous silicon under mechanical shear deformations: shear velocity and temperature effects

Mechanical shear deformations lead, in some cases, to effects similar to those resulting from ion irradiation. Here we characterize the effects of shear velocity and temperature on amorphous silicon (\aSi) modelled using classical molecular dynamics simulations based on the empirical Environment Dependent Inter-atomic Potential (EDIP). With increasing shear velocity at low temperature, we find a systematic increase in the internal strain leading to the rapid appearance of structural defects (5-fold coordinated atoms). The impacts of externally applied strain can be almost fully compensated by increasing the temperature, allowing the system to respond more rapidly to the deformation. In particular, we find opposite power-law relations between the temperature and the shear velocity and the deformation energy. The spatial distribution of defects is also found to strongly depend on temperature and strain velocity. For low temperature or high shear velocity, defects are concentrated in a few atomic layers near the center of the cell while, with increasing temperature or decreasing shear velocity, they spread slowly throughout the full simulation cell. This complex behavior can be related to the structure of the energy landscape and the existence of a continuous energy-barrier distribution.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Crystallization of amorphous silicon induced by mechanical shear deformations

We have investigated the response of amorphous silicon (a-Si), in particular crystallization, to external mechanical shear deformations using classical molecular dynamics (MD) simulations and the empirical Environment Dependent Inter-atomic Potential (EDIP) [Phys. Rev. B 56, 8542 (1997)]. In agreement with previous results we find that, at low shear velocity and low temperature, shear deformations increase disorder and defect density. At high temperatures, however, the deformations are found to induce crystallization, demonstrating a dynamical transition associated with both shear rate and temperature. The properties of a-Si under shear deformations and the extent at which the system crystallizes are analyzed in terms of the potential energy difference (PED) between the sheared and non-sheared material, as well as the fraction of defects and the number of particles that possess a crystalline environment.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Kinetic Activation Relaxation Technique

We present a detailed description of the kinetic Activation-Relaxation Technique (k-ART), an off-lattice, self-learning kinetic Monte Carlo algorithm with on-the-fly event search. Combining a topological classification for local environments and event generation with ART nouveau, an efficient unbiased sampling method for finding transition states, k-ART can be applied to complex materials with atoms in off-lattice positions or with elastic deformations that cannot be handled with standard KMC approaches. In addition to presenting the various elements of the algorithm, we demonstrate the general character of k-ART by applying the algorithm to three challenging systems: self-defect annihilation in c-Si (crystalline silicon), self-interstitial diffusion in Fe and structural relaxation in a-Si (amorphous silicon).

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Evolution of the potential-energy surface of amorphous silicon

The link between the energy surface of bulk systems and their dynamical properties is generally difficult to establish. Using the activation-relaxation technique (ART nouveau), we follow the change in the barrier distribution of a model of amorphous silicon as a function of the degree of relaxation. We find that while the barrier-height distribution, calculated from the initial minimum, is a unique function that depends only on the level of distribution, the reverse-barrier height distribution, calculated from the final state, is independent of the relaxation, following a different function. Moreover, the resulting gained or released energy distribution is a simple convolution of these two distributions indicating that the activation and relaxation parts of a the elementary relaxation mechanism are completely independent. This characterized energy landscape can be used to explain nano-calorimetry measurements.

0 citations0 reviewsNo code linkedOpen access