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Nirvana Caballero

Nirvana Caballero contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Microscopic interplay of temperature and disorder of a one-dimensional elastic interface

Elastic interfaces display scale-invariant geometrical fluctuations at sufficiently large lengthscales. Their asymptotic static roughness then follows a power-law behavior, whose associated exponent provides a robust signature of the universality class to which they belong. The associated prefactor has instead a non-universal amplitude fixed by the microscopic interplay between thermal fluctuations and disorder, usually hidden below experimental resolution. Here we compute numerically the roughness of a one-dimensional elastic interface subject to both thermal fluctuations and a quenched disorder with a finite correlation length. We evidence the existence of a novel power-law regime at short lengthscales. We determine the corresponding exponent $ζ_\textrm{dis}$ and find compelling numerical evidence that, contrarily to available analytic predictions, one has $ζ_\textrm{dis} < 1$. We discuss the consequences on the temperature dependence of the roughness and the connection with the asymptotic random-manifold regime at large lengthscales. We also discuss the implications of our findings for other systems such as the Kardar-Parisi-Zhang equation and the Burgers turbulence.

preprint2021arXiv

Dynamic response and roughening of ferroelectric domain walls driven at planar electrode edges

Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric domain walls is key for their integration into potential nanoelectronics applications, such as ferroelectric racetrack memories. Using piezoresponse force microscopy we analyse the growth and roughness of ferroelectric domains in epitaxial thin film Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$, driven by the electric fields at straight edges of planar electrodes at two different temperatures. This device relevant geometry allows us to confirm that the domain walls are well described as 1-dimensional monoaffine elastic interfaces driven in random-bond disorder. However, we observe a progressive increase of roughness as initially flat domain walls move through the disorder landscape, which could prove a significant limiting factor for racetrack-type memories using ferroelectrics.