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Researcher profile

Nina Markovic

Nina Markovic contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall

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Published work

7 published item(s)

preprint2016arXiv

Patterning Superconductivity in a Topological Insulator

While topological superconductors are predicted to provide building blocks for fault-tolerant quantum computing, one of the remaining challenges is to find a convenient experimental platform that would allow patterning of circuits. We find that superconductivity can be patterned directly into Bi$_2$Se$_3$ nanostructures by selective doping with palladium (Pd). Superconducting regions are defined by depositing Pd on top of the nanostructures using electron beam lithography, followed by in-situ annealing. Electrical transport measurements at low temperatures show either partial or full superconducting transition, depending on the doping conditions. Structural characterization techniques indicate that Pd remains localized in the targeted areas, making it possible to pattern superconducting circuits of arbitrary shapes in this topological material.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Observation of angle-dependent transmission of Dirac electrons in graphene hetero junctions

The relativistic nature of charge carriers in graphene is expected to lead to an angle- dependent transmission through a potential barrier, where Klein tunneling involves annihilation of an electron and a hole at the edges of the barrier. The signatures of Klein tunneling have been observed in gated graphene devices, but the angle dependence of the transmission probability has not been directly observed. Here we show measurements of the angle-dependent transmission through quasi-ballistic graphene heterojunctions with straight and angled leads, in which the barrier height is controlled by a shared gate electrode. Using a balanced differential measurement technique, we isolate the angle-dependent contribution to the resistance from other angle-insensitive, gate-dependent and device-dependent effects. We find large oscillations in the transmission as a function of the barrier height in the case of Klein tunneling at a 45 deg angle, as compared to normal incidence. Our results are consistent with the model that predicts oscillations of the transmission probability due to interference of chiral carriers in a ballistic barrier. The observed angle dependence is the key element behind focusing of electrons and the realization of a Veselago lens in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quantum Interference Noise Near the Dirac Point in Graphene

Effects of disorder on the electronic transport properties of graphene are strongly affected by the Dirac nature of the charge carriers in graphene. This is particularly pronounced near the Dirac point, where relativistic charge carriers cannot efficiently screen the impurity potential. We have studied time-dependent conductance fluctuations and magnetoresistance in graphene in the close vicinity of the Dirac point. We show that the fluctuations are due to the quantum interference effects due to scattering on impurities, and find an unusually large reduction of the relative noise power in magnetic field, possibly indicating that an additional symmetry plays an important role in this regime.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Weber blockade in superconducting nanowires

We have measured the critical current as a function of magnetic field in short and narrow superconducting aluminum nanowires. In the range of magnetic fields in which vortices can enter a nanowire in a single row, we find regular oscillations of the critical current as a function of magnetic field. The oscillations are found to correspond to adding a single vortex to the nanowire, with the number of vortices on the nanowire staying constant within each period of the oscillation. This effect can be thought of as a Weber blockade, and the nanowires act as quantum dots for vortices, analogous to the Coulomb blockade for electrons in quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Asymmetric scattering of Dirac electrons and holes in graphene

The relativistic nature of Dirac electrons and holes in graphene profoundly affects the way they interact with impurities. Signatures of the relativistic behavior have been observed recently in scanning tunneling measurements on individual impurities, but the conductance measurements in this regime are typically dominated by electron and hole puddles. Here we present measurements of quantum interference noise and magnetoresistance in graphene pn junctions. Unlike the conductance, the quantum interference noise can provide access to the scattering at the Dirac point:it is sensitive to the motion of a single impurity, it depends strongly on the fundamental symmetries that describe the system and it is determined by the phase-coherent phenomena which are not necessarily obscured by the puddles. The temperature and the carrier density dependence of resistance fluctuations and magnetoresistance in graphene p-n junctions at low temperatures suggest that the noise is dominated by the quantum interference due to scattering on impurities and that the noise minimum could be used to determine the point where the average carrier density is zero. At larger carrier densities, the amplitude of the noise depends strongly on the sign of the impurity charge, reflecting the fact that the electrons and the holes are scattered by the impurity potential in an asymmetric manner.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Substrate-Independent Catalyst-Free Synthesis of High-Purity Bi2Se3 Nanostructures

We describe a catalyst-free vapor-solid synthesis of bismuth selenide (Bi2Se3) nanostructures at ambient pressure with hydrogen as a carrier gas. The nanostructures were synthesized on glass, silicon and mica substrates and the method yields a variety of nanostructures: nanowires, nanoribbons, nanoplatelets and nanoflakes. The materials analysis shows high chemical purity in all cases, without sacrificing the crystalline structure of Bi2Se3. Low-temperature measurements of the nanostructures indicate contributions from the surface states with a tunable carrier density. Samples synthesized on flexible mica substrates show no significant change in resistance upon bending, indicating robustness of as-grown Bi2Se3 nanostructures and their suitability for device applications.

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preprint2013arXiv

Transmission of phase information between electrons and holes in graphene

We have studied quantum interference between electrons and holes in a split-ring gold interferometer with graphene arms, one of which contained a pn junction. The carrier type, the pn junction and the phase of the oscillations in a magnetic field were controlled by a top gate placed over one of the arms. We observe clear Aharonov-Bohm oscillations at the Dirac point and away from it, regardless of the carrier type in each arm. We also find clear oscillations when one arm of the interferometer contains a single pn junction, allowing us to study the interplay of Aharonov-Bohm effect and Klein tunneling.

0 citations0 reviewsNo code linkedOpen access