BZPEER
More

Discover

About BZPEERSearchGraph

Research tools

HomeCollectionsResearchCollaborationPublish

Network

ExpertsCommunities

Opportunities

Listings

Account

Log inCreate account
Log inCreate account

Source author record

Nikhil Sivadas

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record
cond-mat.mtrl-sci

Catalog footprint

Research overview

4works
1topics
4close collaborators

Actions

Is this your work?

Log in to claim
Open graphBrowse papers

Published work

4 publications

preprint2022arXiv

Anharmonic stabilization of ferrielectricity in CuInP2_2Se6_6

Using first-principles calculations and group-theory based models, we study the stabilization of ferrielectricity (FiE) in CuInP2_2Se6_6. We find that the FiE ground state is stabilized by a large anharmonic coupling between the polar mode and a fully symmetric Raman-active mode. Our results open possibilities for controlling the single-step switching barrier for polarization by tuning the Raman-active mode. We discuss the implications of our findings in the context of designing next-generation optoelectronic devices that can overcome the voltage-time dilemma.

Open access
preprint2016arXiv

Gate-controllable magneto-optic Kerr effect in layered collinear antiferromagnets

Using symmetry arguments and a tight-binding model, we show that for layered collinear anti- ferromagnets, magneto-optic effects can be generated and manipulated by controlling crystal symmetries through a gate voltage. This provides a promising route for electric field manipulation of the magneto-optic effects without modifying the underlying magnetic structure. We further demonstrate the gate control of magneto-optic Kerr effect (MOKE) in bilayer MnPSe3 using first-principles calculations. The field-induced inversion symmetry breaking effect leads to gate-controllable MOKE whose direction of rotation can be switched by the reversal of the gate voltage.

Open access
preprint2015arXiv

Magnetic ground state of semiconducting transition metal trichalcogenide monolayers

Layered transition metal trichalcogenides with the chemical formula ABX3ABX_3 have attracted recent interest as potential candidates for two-dimensional magnets. Using first-principles calculations within density functional theory, we investigate the magnetic ground states of monolayers of Mn- and Cr-based semiconducting trichalcogenides. We show that the second and third nearest-neighbor exchange interactions (J2J_2 and J3J_3) between magnetic ions, which have been largely overlooked in previous theoretical studies, are crucial in determining the magnetic ground state. Specifically, we find that monolayer CrSiTe3\text{CrSiTe}_3 is an antiferromagnet with a zigzag spin texture due to significant contribution from J3J_3, whereas CrGeTe3\text{CrGeTe}_3 is a ferromagnet with a Curie temperature of 106 K. Monolayers of Mn-compounds (MnPS3\text{MnPS}_3 and MnPSe3\text{MnPSe}_3) always show antiferromagnetic Neel order. We identify the physical origin of various exchange interactions, and demonstrate that strain can be an effective knob for tuning the magnetic properties. Possible magnetic ordering in the bulk is also discussed. Our study suggests that ABX3\text{ABX}_3 can be a promising platform to explore 2D magnetic phenomena.

Open access
preprint2015arXiv

Oxygen Vacancies on SrO-terminated SrTiO3(001) Surfaces studied by Scanning Tunneling Spectroscopy

The electronic structure of SrTiO3(001) surfaces was studied using scanning tunneling spectroscopy and density-functional theory. With high dynamic range measurements, an in-gap transition level was observed on SrO-terminated surfaces, at 2.7 eV above the valence band maximum. The density of centers responsible for this level was found to increase with surface segregation of oxygen vacancies and decrease with exposure to molecular oxygen. Based on these finding, the level is attributed to surface O vacancies. A level at a similar energy is predicted theoretically on SrO-terminated surfaces. For TiO2-terminated surfaces, no discrete in-gap state was observed, although one is predicted theoretically. This lack of signal is believed to be due to the nature of defect wavefunction involved, as well as the possible influence of transport limitations in the tunneling spectroscopy measurements.

Open access

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.