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Nicola Bonini

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.supr-con

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preprint2022arXiv

Exploring the Effect of the Number of Hydrogen Atoms on the Properties of Lanthanide Hydrides by DMFT

Lanthanide hydrogen-rich materials have long been considered as one of the candidates with high-temperature superconducting properties in condensed matter physics, and have attracted great interest. Attempts to investigate the effects of different compositions of lanthanide hydrogen-rich materials are ongoing, with predictions and experimental studies in recent years having shown that substances such as LaH 10 , CeH 9 , and LaH 16 exhibit extremely high superconducting temperatures between 150-250 GPa. In particular, researchers have noted that in those materials an increase in the f character at the Fermi level leads to an increase in the superconducting temperature. Here, we further elaborate on the effect of the ratios of lanthanide to hydrogen in these substances with the aim to bring more clarity to the study of superhydrides in these extreme cases by comparing a variety of lanthanide hydrogen-rich materials with different ratios using the DMFT method, and provide ideas for later structural predictions and material property studies.

preprint2022arXiv

High temperature superconductivity in the lanthanide hydrides at extreme pressures

Hydrogen-rich superhydrides are promising high-Tc superconductors, with superconductivity experimentally observed near room temperature, as shown in recently discovered lanthanide superhydrides at very high pressures, e.g. LaH10 at 170 GPa and CeH9 at 150 GPa. Superconductivity is believed to be closely related with the high vibrational modes of the bound hydrogen ions. Here we study the limit of extreme pressures (above 200 GPa) where lanthanide hydrides with large hydrogen content have been reported. We focus on LaH16 and CeH16, two prototype candidates for achieving a large electronic contribution from hydrogen in the electron-phonon coupling. In this work, we propose a first principles calculation platform with the inclusion of many-body corrections to evaluate the detailed physical properties of the Ce-H and La-H systems and to understand the structure, stability and superconductivity of these systems at ultra-high pressure. We provide a practical approach to further investigate conventional superconductivity in hydrogen rich superhydrides. We report that density functional theory provides accurate structure and phonon frequencies, but many-body corrections lead to an increase of the critical temperature, that is associated with spectral weight transfer of the f-states.

preprint2020arXiv

First-principles study of electronic transport and structural properties of Cu$_{12}$Sb$_4$S$_{13}$ in its high-temperature phase

We present an ab initio study of the structural and electronic transport properties of tetrahedrite, Cu$_{12}$Sb$_4$S$_{13}$, in its high-temperature phase. We show how this complex compound can be seen as the outcome of an ordered arrangement of S-vacancies in a semiconducting fematinite-like structure (Cu3SbS4). Our calculations confirm that the S-vacancies are the natural doping mechanism in this thermoelectric compound and reveal a similar local chemical environment around crystallographically inequivalent Cu atoms, shedding light on the debate on XPS measurements in this compound. To access the electrical transport properties as a function of temperature we use the Kubo-Greenwood formula applied to snapshots of first-principles molecular dynamics simulations. This approach is essential to effectively account for the interaction between electrons and lattice vibrations in such a complex crystal structure where a strong anharmonicity plays a key role in stabilising the high-temperature phase. Our results show that the Seebeck coeffcient is in good agreement with experiments and the phonon-limited electrical resistivity displays a temperature trend that compares well with a wide range of experimental data. The predicted lower bound for the resistivity turns out to be remarkably low for a pristine mineral in the Cu-Sb-S system but not too far from the lowest experimental data reported in literature. The Lorenz number turns out to be substantially lower than what expected from the free-electron value in the Wiedemann-Franz law, thus providing an accurate way to estimate the electronic and lattice contributions to the thermal conductivity in experiments, of great significance in this very low thermal conductivity crystalline material.

preprint2014arXiv

Electron-Phonon Interactions and the Intrinsic Electrical Resistivity of Graphene

We present a first-principles study of the temperature- and density-dependent intrinsic electrical resistivity of graphene. We use density-functional theory and density-functional perturbation theory together with very accurate Wannier interpolations to compute all electronic and vibrational properties and electron-phonon coupling matrix elements; the phonon-limited resistivity is then calculated within a Boltzmann-transport approach. An effective tight-binding model, validated against first-principles results, is also used to study the role of electron-electron interactions at the level of many-body perturbation theory. The results found are in excellent agreement with recent experimental data on graphene samples at high carrier densities and elucidate the role of the different phonon modes in limiting electron mobility. Moreover, we find that the resistivity arising from scattering with transverse acoustic phonons is 2.5 times higher than that from longitudinal acoustic phonons. Last, high-energy, optical, and zone-boundary phonons contribute as much as acoustic phonons to the intrinsic electrical resistivity even at room temperature and become dominant at higher temperatures.

preprint2014arXiv

Phonon-limited resistivity of graphene by first-principle calculations: electron-phonon interactions, strain-induced gauge field and Boltzmann equation

Electron-phonon coupling in graphene is extensively modeled and simulated from first principles. We find that using an accurate model for the polarizations of the acoustic phonon modes is crucial to obtain correct numerical results. The interactions between electrons and acoustic phonon modes, the gauge field and deformation potential, are calculated at the DFT level in the framework of linear response. The zero-momentum limit of acoustic phonons is interpreted as a strain pattern, allowing the calculation of the acoustic gauge field parameter in the GW approximation. The role of electronic screening on the electron-phonon matrix elements is investigated. We then solve the Boltzmann equation semi-analytically in graphene, including both acoustic and optical phonon scattering. We show that, in the Bloch-Grüneisen and equipartition regimes, the electronic transport is mainly ruled by the unscreened acoustic gauge field, while the contribution due to the deformation potential is negligible and strongly screened. By comparing with experimental data, we show that the contribution of acoustic phonons to resistivity is doping- and substrate-independent. The DFT+GW approach underestimates this contribution to resistivity by about 30 %. Above 270K, the calculated resistivity underestimates the experimental one more severely, the underestimation being larger at lower doping. We show that, beside remote phonon scattering, a possible explanation for this disagreement is the electron-electron interaction that strongly renormalizes the coupling to intrinsic optical-phonon modes. Finally, after discussing the validity of the Matthiessen rule in graphene, we derive simplified analytical solutions of the Boltzmann equation to extract the coupling to acoustic phonons, related to the strain-induced gauge field, directly from experimental data.

preprint2011arXiv

Dominant Phonon Wavevectors and Strain-induced Splitting of the 2D Graphene Raman Mode

The dominant phonon wavevectors $q^{*}$ probed by the 2D Raman mode of graphene are highly anisotropic and rotate with the orientation of the polarizer:analyzer direction relative to the lattice. The corresponding electronic transitions connect the electronic equibandgap contours where the product of the ingoing and outgoing optical matrix elements is strongest, showing a finite component along $\bm{K}-\bmΓ$ that sensitively determines $q^{*}$. We revoke the notion of 'inner' and 'outer' processes. Our findings explain the splitting of the 2D mode of graphene under uniaxial tensile strain. The splitting originates from a strain-induced distortion of the phonon dispersion; changes in the electronic band structure and resonance conditions are negligeable for the 2D Raman spectrum.