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Niclas Teichert

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Published work

4 published item(s)

preprint2016arXiv

How to enable bulk-like martensitic transformation in epitaxial films

The present study is dedicated to the influence of different substrate and buffer layer materials on the martensitic transformation in sputter deposited epitaxial shape memory Heusler alloys. For this, the magnetocaloric Heusler alloy Ni-Co-Mn-Al \cite{Teichert2015b} is grown on MgO(001), MgAl$_{2}$O$_{4}$(001), and MgO(001)/V substrates, which exhibit a lattice misfit to the Ni-Co-Mn-Al between $-1.2\%$ and $3.6\%$. By temperature dependent X-ray diffraction measurements it is shown that the optimum buffer layer for shape memory Heusler films is not one with minimum lattice misfit, but one with minimum Young's modulus and moderate misfit because an elastic buffer layer can deform during the martensitic transformation of the Heusler layer. Furthermore, epitaxial strain caused by a moderate lattice misfit does not significantly change the martensitic transformation temperatures.

preprint2015arXiv

Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions

The exchange bias effect is commonly used to shift the coercive field of a ferromagnet. This technique is crucial for the use of magnetic tunnel junctions as logic or memory devices. Therefore, an independent switching of the two ferromagnetic electrodes is necessary to guarantee a reliable readout. Here, we demonstrate that the intrinsic exchange bias effect of Ni-Mn-Sn can be used to apply a unidirectional anisotropy to magnetic tunnel junctions. For this, we use epitaxial Ni-Mn-Sn films as pinning layers for microfabricated CoFeB/MgO/CoFeB magnetic tunnel junctions. We compare the exchange bias field ($H_{\text{EB}}$) measured after field cooling in $-10$\,kOe external field by magnetization measurements with $H_{\text{EB}}$ obtained from tunnel magnetoresistance measurements. Consistent for both methods we find an exchange bias of about $H_{\text{EB}}=130$\,Oe at 10\,K, which decreases with increasing temperature and vanishes above 70\,K.

preprint2015arXiv

Structure and Giant Inverse Magnetocaloric Effect of Epitaxial Ni-Co-Mn-Al Films

The structural, magnetic, and magnetocaloric properties of epitaxial Ni-Co-Mn-Al thin films with different compositions have been studied. The films were deposited on MgO(001) substrates by co-sputtering on heated substrates. All films show a martensitic transformation, where the transformation temperatures are strongly dependent on the composition. The structure of the martensite phase is shown to be 14M. The metamagnetic martensitic transformation occurs from strongly ferromagnetic austenite to weakly magnetic martensite. The structural properties of the films were investigated by atomic force microscopy and temperature dependent X-ray diffraction. Magnetic and magnetocaloric properties were analyzed using temperature dependent and isothermal magnetization measurements. We find that Ni$_{41}$Co$_{10.4}$Mn$_{34.8}$Al$_{13.8}$ films show giant inverse magnetocaloric effects with magnetic entropy change of 17.5\,J\,kg$^{-1}$K$^{-1}$ for $μ_0 ΔH=5\,\text{T}$.

preprint2015arXiv

Vanadium sacrificial layers as a novel approach for the fabrication of freestanding Heusler Shape Memory Alloys

In this study we report a method for the preparation of freestanding magnetocaloric thin films. Non-stoichiometric Heusler alloys Ni-Mn-Sn, Ni-Co-Mn-Sn and Ni-Co-Mn-Al are prepared via sputter deposition. A sacrificial vanadium layer is added between the substrate and the Heusler film. By means of selective wet-chemical etching the vanadium layer can be removed. Conditions for the crystallization of Vanadium layers and epitaxial growth of the Heusler films are indicated. Magnetic and structural properties of freestanding and as-prepared films are compared in detail. The main focus of this study is on the influence of substrate constraints on the Martensitic transistion.