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Nguyen N. T. Nam

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2020arXiv

Continuum model for relaxed twisted bilayer graphenes and moiré electron-phonon interaction

We construct an analytic continuum model to describe the electronic structure and the electron-phonon interaction in twisted bilayer graphenes with arbitrary lattice deformation. Starting from the tight-binding model, we derive the interlayer Hamiltonian in the presence of general lattice displacement, and obtain a long-wavelength continuum expression for smooth deformation. We show that the continuum model correctly describes the band structures of the lattice-relaxed twisted bilayer graphenes. We apply the formula to the phonon vibration, and derive an explicit expression of the electron-phonon matrix elements between the moiré band states and the moiré phonon modes. By numerical calculation, we find that the electron-phonon coupling and phonon mediated electron-electron interaction are significantly enhanced in low twist angles due to the superlattice hybridization.

preprint2020arXiv

Perfect one-dimensional chiral states in biased twisted bilayer graphene

We theoretically study the electronic structure of small-angle twisted bilayer graphene with a large potential asymmetry between the top and bottom layers. We show that the emergent helical states known to appear on the triangular AB-BA domain boundary do not actually form a percolating network, but instead they provide independent, perfect one-dimensional channels propagating in three different directions. Using the continuum-model Hamiltonian, we demonstrate that an applied bias causes two well-defined energy windows which contain sparsely distributed one-dimensional channels. The origin of these energy windows can be understood using a two-band model of the intersecting electron and hole bands of single layer graphene. We also use the tight-binding model to implement the lattice deformations in twisted bilayer graphene, and discuss the effect of lattice relaxation on the one-dimensional channels.

preprint2015arXiv

Electron transmission through the stacking domain boundary in multilayers graphene

We present a theoretical study on the electron transmission through the AB-BA stacking boundary in multilayer graphene. Using the tight-binding model and the transfer matrix method, we calculate the electron transmission probability through the boundary as a function of electron Fermi energy in multilayers from bilayer to five-layer. We find that the transmission is strongly suppressed particularly near the band touching point, suggesting that the electronic conductivity in general multilayer graphenes is significantly interfered by stacking fault. The conductivity suppression by stacking fault is the strongest in the bilayer graphene, while it is gradually relaxed as increasing the number of layers. At a large carrier density, we observe an even-odd effect where the transmission is relatively lower in trilayer and five-layer than in bilayer and four-layer, and this is related to the existence of a monolayer-like linear band in odd layers. For bilayer graphene, we also study the effect of the perpendicular electric field opening an energy gap, and show that the band deformation enhances the electron transmission at a fixed carrier density.