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Navdeep Goyal

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2 publications

preprint2020arXiv

Investigating Phase Transition and Morphology of Bi-Te Thermoelectric System

The optimization of secondary phase in thermoelectric(TE) materials can {helps in improvisation of material's efficiency}. Being a potential {contender} for lower temperature TE application, bismuth telluride(Bi2_2Te3_3) nanoparticles were synthesized via different routes and profiles to optimize their pure single phase. Systematic characterizations were performed with the help of X-ray diffraction (XRD), Rietveld refinement and field effect-scanning electron microscopy(FE-SEM) for structural and morphological behavior, while TE properties such as Seebeck coefficient, electrical conductivity and power-factor were measured for the purest sample chosen. Rietveld refinement in the XRD pattern of the samples revealed that only a small amount (∼\sim 1.6\%) of Bi2_2Te3_3 was formed in co-precipitation method, while the hydrothermal technique increases this phase with increment in synthesis duration. This work focused on the phase evolution of Bi2_2Te3_3 with increasing synthesis duration time at constant temperature and vice-versa. XRD and Rietveld refinement revealed that the hydrothermal technique (150 ∘^\circC for 48 hours) can synthesize purest samples (84\% Bi2_2Te3_3 phase in this case). {FE-SEM and Energy Dispersive X-ray analysis unveiled that the impure phases in the system {were} quantitatively reduced, and it supported by decline in atomic percentage of oxygen from 37\% to 11\%, in addition to this, it was also found that particle size was also decreased with increase in temperature.} The observed electrical conductivity of the chosen sample is ∼\sim20 times greater, while Seebeck coefficient is ∼\sim3 times lower than that of pure Bi2_2Te3_3 phase. The detailed analysis has generalized the growth mechanism in Bi2_2Te3_3 phase evolution by the diffusion of Bi into Te nanorods to fabricate hexagonal Bi2_2Te3_3.

preprint2007arXiv

Effect of silver doping on the electrical properties of a-Sb2_2Se3_3

This paper reports the effect of Ag-doping on electrical properties of a-Sb2Se3 in the temperature range 240-340 K and frequency range 5 Hz to 100 kHz. The variation of transport properties with thermal doping has been studied. Ag-doping produced two homogeneous phases in the sample and which are found to be voltage dependent in the temperature range studied and frequency dependent in lower frequency region (0.1 - 10 kHz). Activation energy Eg and C' [=σ0σ_0 exp (γγ/k), where γγ, is the temperature coefficient of the band gap] calculated from dc conductivity has been found to vary from 0.42 eV to 0.26 eV and 41.08x10−6^-6 to 2.902x10-6 $\ohm^{-1}$cm−1^{-1} respectively. Ag-doping can be used to make the sample more useful in device applications.

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