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Naoki Ohashi

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2 publications

preprint2021arXiv

Nuclear magnetic resonance of ion implanted 8^8Li in ZnO

We report on the stability and magnetic state of ion implanted 8^8Li in single crystals of the semiconductor ZnO using ββ-detected nuclear magnetic resonance. At ultradilute concentrations, the spectra reveal distinct Li sites from 7.6 to 400 K. Ionized shallow donor interstitial Li is stable across the entire temperature range, confirming its ability to self-compensate the acceptor character of its (Zn) substitutional counterpart. Above 300 K, spin-lattice relaxation indicates the onset of correlated local motion of interacting defects, and the spectra show a site change transition from disordered configurations to substitutional. Like the interstitial, the substitutional shows no resolved hyperfine splitting, indicating it is also fully ionized above 210 K. The electric field gradient at the interstitial 8^8Li exhibits substantial temperature dependence with a power law typical of non-cubic metals.

preprint2013arXiv

Effect of n- and p-type Doping on Coherent Phonons in GaN

Effect of doping on the carrier-phonon interaction in wurtzite GaN is investigated by pump-probe reflectivity measurements using 3.1 eV light in near resonance with the fundamental band gap of 3.39 eV. Coherent modulations of the reflectivity due to the E2 and the A1(LO) modes, as well as the 2A1(LO) overtone are observed. Doping of acceptor and more so for donor atoms enhances the dephasing of the polar A1(LO) phonon via coupling with plasmons, with the effect of donors being stronger. Doping also enhances the relative amplitude of the coherent A1(LO) phonon with respect to that of the high-frequency E2 phonon, though it does not affect the relative intensity in Raman spectroscopic measurements. This enhanced coherent amplitude indicates that transient depletion field screening (TDFS), in addition to impulsive stimulated Raman scattering (ISRS), contribute to generation of the coherent polar phonons even for sub-band gap excitation. Because the TDFS mechanism requires photoexcitation of carriers, we argue that the interband transition is made possible at the surface with photon energies below the bulk band gap through the Franz-Keldysh effect.

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