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Researcher profile

Nanshu Liu

Nanshu Liu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-ph

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Published work

3 published item(s)

preprint2022arXiv

Strain Effect on Air-Stability of Monolayer CrSe2

The discovery of two dimensional (2D) magnetic materials has brought great research value for spintronics and data storage devices. However, their air-stability as well as the oxidation mechanism has not been unveiled, which limits their further applications. Here, by first-principles calculations, we carried out a detailed study on the oxidation process of monolayer CrSe2 and biaxial tensile strain effect. We found dissociation process of O2 on pristine CrSe2 sheet is an endothermic reaction with a reaction energy barrier of 0.53 eV, indicating its thermodynamics stability. However, such a process becomes exothermic under a biaxial tensile strain reaching 1%, accompanying with a decreased reaction barrier, leading to reduced stability. These results manifest that in-plane strain plays a significant role in modifying air-stability in CrSe2 and shed considerable light on searching appropriate substrate to stabilize 2D magnetic materials.

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preprint2020arXiv

Enhanced Ferromagnetism of CrI3 Bilayer by Self-Intercalation

Two-dimensional (2D) ferromagnets with high Curie temperature have long been the pursuit for electronic and spintronic applications. CrI3 is a rising star of intrinsic 2D ferromagnets, however, it suffers from weak exchange coupling. Here we propose a general strategy of self-intercalation to achieve enhanced ferromagnetism in bilayer CrI3. We showed that filling either Cr or I atoms into the van der Waals gap of stacked and twisted CrI3 bilayers can induce the double exchange effect and significantly strengthen the interlayer ferromagnetic coupling. According to our first-principles calculations, the intercalated native atoms act as covalent bridge between two CrI3 layers and lead to discrepant oxidation states for the Cr atoms. These theoretical results offer a facile route to achieve high-Curie-temperature 2D magnets for device implementation.

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preprint2020arXiv

High-Curie-temperature ferromagnetism in bilayer CrI3 on bulk semiconducting substrates

Two-dimensional (2D) ferromagnetic (FM) semiconductors with high Curie temperature have long been pursued for electronic and spintronic applications. Here we provide a general strategy to achieve robust FM state in bilayer CrI3 of the monoclinic stacking, which intrinsically has interlayer antiferromagnetic (AFM) order and weak in-plane FM coupling. We showed that the proximity effect from bulk semiconducting substrates induces electronic doping and significantly increases the FM nearest-neighbor exchange for bilayer CrI3, leading to the AFM-to-FM transition for the interlayer spin configuration as well as enhanced intralayer FM coupling. By first-principles calculations and Monte Carlo simulations, bulk and 2D semiconductors providing different interaction strengths from strong covalent bonding to weak van der Waals (vdW) interaction with CrI3 are compared to thoroughly address the substrate effect on magnetic behavior and Curie temperature of bilayer CrI3. These theoretical results offer a facile route for direct synthesis of 2D ferromagnets on proper semiconducting substrates to achieve high Curie temperature for device implementation.

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