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Nagarajan Valanoor

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Published work

3 published item(s)

preprint2022arXiv

Stability of ferroelectric bubble domains

Nanoscale ferroelectric topologies such as vortices, anti-vortices, bubble patterns etc. are stabilized in thin films by a delicate balance of both mechanical and electrical boundary conditions. A systematic understanding of the phase stability of bubble domains, particularly when the above factors act simultaneously, remains elusive. Here we present first-principle-based simulations in combination with scanning probe microscopy of ultrathin epitaxial (001) PbZr0.4Ti0.6O3 heterostructures to address this gap. The simulations predict that as-grown labyrinthine domains will transform to bubbles under combinations of reduced film thickness, increased mechanical pressure and/or improved electrical screening. These topological transitions are explained by a common fundamental mechanism. Namely, we argue that, independently of the nature of the driving force, the evolution of the domain morphology allows the system to conserve its original residual depolarization field. Thereby, the latter remains pinned to a value determined by an external or built-in electric bias. To verify our predictions, we then exploit tomographic atomic force microscopy to achieve the concurrent effect of reducing film thickness and increased mechanical stimulus. The results provide a systematic understanding of phase stability and demonstrate controlled manipulation of nanoscale ferroelectric bubble domains.

preprint2021arXiv

Optical Tuning of Resistance Switching in Polycrystalline Gallium Phosphide Thin Films

The nanoscale resistive switching characteristics of gallium phosphide (GaP) thin films directly grown on Si are investigated as a function of incident light. Firstly, as-grown GaP films show a high RON/ROFF (~10^4), shown to arise from the formation of conductive channels along the grain boundaries. It is proposed that point defects (most likely Ga interstitials) and structural disorder at the grain boundaries provide the ideal environment to enable the filamentary switching process. Next, we explored if such defects can give rise to mid-gap states, and if so could they be activated by photonic excitation. Both first-principles calculations as well as UV-vis and photoluminescence spectroscopy strongly point to the possibility of mid-gap electronic states in the polycrystalline GaP film. Photoconductive atomic force microscopy (phAFM), a scanning probe technique, is used to image photocurrents generated as a function of incident photon energy (ranging from sub band-gap to above band-gap) on the GaP film surface. We observe photocurrents even for incident photon energies lower than the band-gap, consistent with the presence of mid-gap electronic states. Moreover the photocurrent magnitude is found to be directly proportional to the incident photon energy with a concomitant decrease in the filament resistance. This demonstrates GaP directly integrated on Si can be a promising photonic resistive switching materials system.

preprint2021arXiv

Predicting nanocrystal morphology governed by interfacial strain

The shape dependence for the technologically important nickel oxide (NiO) nanocrystals on (001) strontium titanate substrates is investigated under the generalized Wulff-Kaichew (GWK) theorem framework. It is found that the shape of the NiO nanocrystals is primarily governed by the existence (or absence) of interfacial strain. Nanocrystals that have a fully pseudomorphic interface with the substrate (i.e. the epitaxial strain is not relaxed) form an embedded smooth ball-crown morphology with {001}, {011}, {111} and high-index {113} exposed facets with a negative Wulff point. On the other hand, when the interfacial strain is relaxed by misfit dislocations, the nanocrystals take on a truncated pyramidal shape, bounded by {111} faces and a {001} flat top, with a positive Wulff point. Our quantitative model is able to predict both experimentally observed shapes and sizes with good accuracy. Given the increasing demand for hetero-epitaxial nanocrystals in various physio-chemical and electro-chemical functional devices, these results lay the important groundwork in exploiting the GWK theorem as a general analytical approach to explain hetero-epitaxial nanocrystal growth on oxide substrates governed by interface strain.