Researcher profile

N. V. Malekhonova

N. V. Malekhonova contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2026arXiv

Low-temperature Spark Plasma Sintering of fine refractory composite powders core-shell: A case of the powders W@Ni

The mechanisms of fast low-temperature Spark Plasma Sintering (SPS) of W + 10% wt. Ni powders were investigated. The powder compositions were obtained in two methods: (i) by mixing W and Ni powders in a specified ratio (hereinafter referred to as W + Ni); (ii) by Ni deposition on the surface of submicron W particles allowing the formation of particles with a core W - shell Ni structure (hereinafter referred to as W@Ni). To reduce the concentrations of oxygen and oxides, the powders were annealed in hydrogen. The solid-phase sintering was performed at various temperatures (1000-1150°C), pressures (40-80 MPa), heating rates (50-500°C/min), and isothermal holding times (0-20 min). The sintering temperatures corresponded to the onset of intense dissolution of W in Ni. The samples had high relative density and small grain sizes. The activation energy of SPS of the mixed powders was close to the one of the grain boundary diffusion. The key mechanism for the compaction of W@Ni particles in the SPS process is Coble creep. The increasing of the sintering temperature was shown to lead to an increase in the solubility of W in Ni and, consequently, to an increase in the number of secondary Ni4W particles formed during cooling down. The grain growth has a minor effect on the mechanical properties of the W alloy compared to the changes in its phase composition.

preprint2013arXiv

Anomalous Hall effect in two-phase semiconductor structures: the crucial role of ferromagnetic inclusions

The Hall effect in InMnAs layers with MnAs inclusions of 20-50 nm in size is studied both theoretically and experimentally. We find that the anomalous Hall effect can be explained by the Lorentz force caused by the magnetic field of ferromagnetic inclusions and by an inhomogeneous distribution of the current density in the layer. The hysteretic dependence of the average magnetization of ferromagnetic inclusions on an external magnetic field results in a hysteretic dependence of RH(Hext). Thus we show the possibility of a hysteretic RH(Hext) dependence (i.e. observation of the anomalous Hall effect) in thin conductive layers with ferromagnetic inclusions in the absence of carriers spin polarization.

preprint2013arXiv

Electron microscopy and diffraction study of high-temperature diamond-like Si-based ferromagnetic with self-organized super-lattice distribution of Mn impurity

New structure data for the high-temperature diluted magnetic semiconductor Si:Mn, synthesized by laser method are presented. The higher resolution transmission electron microscopy and diffraction was applied in two crystal directions of epitaxial layers of DMS Si:Mn with elimination of the contribution from GaAs substrate and interface. It is established, that the DMS Si:Mn can be represent as compound with variable composition Si2+xMn1-x (0 <x <1), single-phase diamond like structure, high crystal perfection and the self-organized formation of the super-lattice structures with the period equal to triple the distance between the nearest (110) atomic layers and interval between (110) layers which are doped by Mn atoms and orientated along the direction of Si:Mn film growth. The Si with 15 percent of Mn (or Si2.5Mn0.5) films consist of blocks with the 15-50 nm sizes and with mutually perpendicular orientations of the super-lattice modulations. Atoms of manganese in the (110) layers, doped by these impurity, settle down in the form of strips of an one-atom thickness. These manganese strips in the given (110) layer alternate occupy about half of area of the layer (110) in the full consent with the spectral X-ray analysis and ferromagnetic resonance data.