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N. Gonzalez Szwacki

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3 publications

preprint2015arXiv

(Ga,Mn)As under pressure: a first-principles investigation

Electronic and magnetic properties of Ga1−x_{1-x}Mnx_{x}As, obtained from first-principles calculations employing the hybrid HSE06 functional, are presented for x=6.25%x=6.25\% and 12.5%12.5\% under pressures ranging from 0 to 15 GPa. In agreement with photoemission experiments at ambient pressure, we find for x=6.25%x=6.25\% that non-hybridized Mn-3dd levels and Mn-induced states reside about 5 and 0.4 eV below the Fermi energy, respectively. For elevated pressures, the Mn-3dd levels, Mn-induced states, and the Fermi level shift towards higher energies, however, the position of the Mn-induced states relative to the Fermi energy remains constant due to hybridization of the Mn-3dd levels with the valence As-4pp orbitals. We also evaluate, employing Monte Carlo simulations, the Curie temperature (TCT_{\rm C}). At zero pressure, we obtain TC=181T_{\rm C}=181K, whereas the pressure-induced changes in TCT_{\rm C} are dTCT_{\rm C}/dp=+4.3p=+4.3K/GPa for x=12.5%x=12.5\% and an estimated value of dTCT_{\rm C}/dp≈+2.2p\approx+2.2K/GPa for x=6.25%x=6.25\% under pressures up to 6 GPa. The determined values of dTCT_{\rm C}/dpp compare favorably with dTCT_{\rm C}/dp=+p=+(2-3) K/GPa at p≤1.2p\leq1.2GPa found experimentally and estimated within the pp-dd Zener model for Ga0.93_{0.93}Mn0.07_{0.07}As in the regime where hole localization effects are of minor importance [M. Gryglas-Borysiewicz etet alal., Phys. Rev. B 82{\bf 82}, 153204 (2010)].

preprint2011arXiv

The Fe-Mg interplay and the effect of deposition mode in (Ga,Fe)N doped with Mg

The effect of Mg codoping and its deposition mode on the Fe distribution in (Ga,Fe)N layers grown by metalorganic vapor phase epitaxy is investigated. Both homogeneously- and digitally-Mg codoped samples are considered and contrasted to the case of (Ga,Fe)N layers obtained without any codoping by shallow impurities. The structural analysis of the layers by high-resolution transmission electron microscopy and by high-resolution- and synchrotron x-ray diffraction gives evidence of the fact that in the case of homogenous-Mg doping, Mg and Fe competitively occupy the Ga-substitutional cation sites, reducing the efficiency of Fe incorporation. Accordingly, the character of the magnetization is modified from ferromagnetic-like in the non-codoped films to paramagnetic in the case of homogeneous Mg codoping. The findings are discussed vis-`a-vis theoretical results obtained by ab initio computations, showing only a weak effect of codoping on the pairing energy of two Fe cations in bulk GaN. However, according to these computations, codoping reverses the sign of the paring energy of Fe cations at the Ga-rich surface, substantiating the view that the Fe aggregation occurs at the growth surface. In contrast to the homogenous deposition mode, the digital one is found to remarkably promote the aggregation of the magnetic ions. The Fe-rich nanocrystals formed in this way are distributed non-uniformly, giving reason for the observed deviation from a standard superparamagnetic behavior.

preprint2010arXiv

The Symmetry of the Boron Buckyball and a Related Boron Nanotube

We investigate the symmetry of the boron buckyball and a related boron nanotube. Using large-scale ab-initio calculations up to second-order Møller Plesset perturbation theory, we have determined unambiguously the equilibrium geometry/symmetry of two structurally related boron clusters: the B80 fullerene and the finite-length (5,0) boron nanotube. The B80 cluster was found to have the same symmetry, Ih, as the C60 molecule since its 20 additional boron atoms are located exactly at the centers of the 20 hexagons. Additionally, we also show that the (5,0) boron nanotube does not suffer from atomic buckling and its symmetry is D5d instead of C5v as has been described by previous calculations. Therefore, we predict that all the boron nanotubes rolled from the α-sheet will be free from structural distortions, which has a significant impact on their electronic properties.

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