Researcher profile

N. Delegan

N. Delegan contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

A differentiable forward model for the concurrent, multi-peak Bragg coherent x-ray diffraction imaging problem

We present a general analytic approach to spatially resolve the nano-scale lattice distortion field of strained and defected compact crystals with Bragg coherent x-ray diffraction imaging (BCDI). Our approach relies on fitting a differentiable forward model simultaneously to multiple BCDI datasets corresponding to independent Bragg reflections from the same single crystal. It is designed to be faithful to heterogeneities that potentially manifest as phase discontinuities in the coherently diffracted wave, such as lattice dislocations in an imperfect crystal. We retain fidelity to such small features in the reconstruction process through a Fourier transform -based resampling algorithm designed to largely avoid the point spread tendencies of commonly employed interpolation methods. The reconstruction model defined in this manner brings BCDI reconstruction into the scope of explicit optimization driven by automatic differentiation. With results from simulations and experimental diffraction data, we demonstrate significant improvement in the final image quality compared to conventional phase retrieval, enabled by explicitly coupling multiple BCDI datasets into the reconstruction loss function.

preprint2020arXiv

Quantum well stabilized point defect spin qubits

Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit. Using density-functional theory and experimental synchrotron x-ray diffraction studies, we construct a model for previously unattributed point defect centers in silicon carbide (SiC) as a near-stacking fault axial divacancy and show how this model explains these defect's robustness against photoionization and room temperature stability. These results provide a materials-based solution to the optical instability of color centers in semiconductors, paving the way for the development of robust single-photon sources and spin qubits.