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N. Camara

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2012arXiv

Raman spectrum and optical extinction of graphene buffer layers on the Si-face of 6H-SiC

The buffer layer has been analysed by combined micro-Raman and micro-transmission experiments. The epitaxial graphene growth on the (0001) Si face of 6H-SiC substrates was tuned to get a mixed surface at the early stage of graphitization with i) bare SiC, ii) buffer layer and iii) in some localized areas small monolayers flakes on top of the buffer layer. These unique samples enabled to measure the Raman spectrum of the buffer layer (close to the Raman spectrum of a carbon layer with a significant percentage of sp3 bonds) and its corresponding relative extinction at 514.5 nm. The Raman spectrum of the buffer layer remains visible after the growth of one monolayer on top but, despite the relatively low absorption coefficient of graphene, the Raman intensity is strongly reduced (typically divided by 3). The buffer layer background will bias usual evaluations of the domain sizes based on the D/G integrated intensities ratio. Finally, several Raman maps show the excellent thickness uniformity and crystalline quality of the graphene monolayers and that they are subjected to a non uniform compressive strain with values comprised between -0.60% and -0.42%.

preprint2011arXiv

Bottom-gated epitaxial graphene suitable for half-integer quantum metrology ?

We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal, 200 nm below the surface, and works well at intermediate temperatures: 40K-80K. The Dirac point is observed at moderate gate voltages (1-20V) depending upon the surface preparation. For temperatures below 40K, the gate is inefficient as the buried channel is frozen out. However, the carrier concentration in graphene remains very close to the value set at T\sim 40K. The absence of parallel conduction is evidenced by the observation of the half-integer quantum Hall effect at various concentrations at T\sim 4K. These observations pave the way to a better understanding of intrinsic properties of epitaxial graphene and are promising for applications such as quantum metrology.

preprint2011arXiv

Interplay between interferences and electron-electron interactions in epitaxial graphene

We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak localization and antilocalization are extracted at low magnetic fields, after elimination of a geometric magnetoresistance and subtraction of the magnetic field dependent Drude conductivity. The electron electron interaction correction is extracted at higher magnetic fields, where localization effects disappear. Both phenomena are weak but sizable and of the same order of magnitude. If compared to graphene on silicon dioxide, electron electron interaction on epitaxial graphene are not significantly reduced by the larger dielectric constant of the SiC substrate.

preprint2009arXiv

Investigation of Long Monolayer Graphene Ribbons grown on Graphite Capped 6H-SiC (000-1)

We present an investigation of large, isolated, graphene ribbons grown on the C-face of on-axis semi-insulating 6H-SiC wafers. Using a graphite cap to cover the SiC sample, we modify the desorption of the Si species during the Si sublimation process. This results in a better control of the growth kinetics, yielding very long (about 300 microns long, 5 microns wide), homogeneous monolayer graphene ribbons. These ribbons fully occupy unusually large terraces on the step bunched SiC surface, as shown by AFM, optical microscopy and SEM. Raman spectrometry indicates that the thermal stress has been partially relaxed by wrinkles formation, visible in AFM images. In addition, we show that despite the low optical absorption of graphene, optical differential transmission can be successfully used to prove the monolayer character of the ribbons.