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Researcher profile

Mukesh Kumar Dasoundhi

Mukesh Kumar Dasoundhi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2022arXiv

Growth of rare-earth monopnictide DySb single crystal by novel Self-flux method

This report presents a new synthesis protocol for the single crystal growth of rare earth monopnictide DySb by self-flux technique. A detailed structural, transport and magnetic characterization have been done using X-Ray diffraction (XRD), High resolution X-Ray diffraction (HRXRD), resistivity and magnetization measurements respectively. The Rietveld refinement of powder XRD pattern confirms that the grown crystal is in single phase and crystallizes in space group Fm3m(225) of rock-salt type crystal structure. HRXRD on cleaved crystal confirms the single crystalline nature while rocking curve analysis reveals the high quality of the grown crystal. Temperature dependent resistivity and magnetization measurements show a transition at 9.7K from paramagnetic (PM) to antiferromagnetic (AFM) state.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Large linear magnetoresistance and evidence of degeneracy lifting of valence bands in rhombohedral phase of topological crystalline insulator SnTe

We report a comprehensive magneto-transport study on single crystalline p-type topological crystalline insulator (TCI) SnTe, across the cubic-to-rhombohedral (R3m) transition which occurs as a function of temperature. The electrical resistivity of a well-characterized SnTe crystal shows evidence for the cubic-to-rhombohedral structural transition at T$_s$ $\sim$64,K and a carrier density of $\sim$1.8$\times$10$^{20}$ at 77,K. As a function of applied magnetic field perpendicular to the (100) plane, SnTe exhibits a large unsaturated linear magnetoresistance (LMR) reaching a value of 42% at 5K and 8T. LMR is found to have a direct dependence on the mobility and a detailed analysis shows that it follows the classical Parish-Littlewood model of conductivity fluctuations arising from macroscopic inhomogeneity of tellurium interstitial atoms. We also observe SdH oscillations in the rhombohedral (R3m) phase with a Berry phase of $π$ and significantly lower carrier density $\sim$5.32$\times$10$^{11}$cm$^{-2}$ at 2K, which provides direct evidence of protected topological surface states in the (R3m) phase. The Hall conductivity shows a transformation from one band to two-band behavior across the structural transition, thus providing experimental evidence for the degeneracy lifting of bulk valence bands below the cubic symmetry breaking point which is consistent with recent band structure calculations. The overall results indicate that magneto-transport studies can distinctly probe the surface and bulk sensitive properties of SnTe, and can also track the band-splitting of degenerate bands at the Fermi level across the cubic-to-rhombohedral (R3m) transition.

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preprint2020arXiv

Extremely large linear magnetoresistance in Antimony crystal

In this letter we report the observation of extremely large non-saturating linear magnetoresistance (MR) in Antimony(Sb) crystal. An extremely large magnetoresistance (XMR) of 43000% at 2K and large unsaturating MR$\sim\ $70% at room temperature is observed at the magnetic field of 9T. Hall measurements reveal a very high mobility $\sim\ $3.8 x 10$^{4}$ cm$^{2}$/Vs of charge carriers and strong temperature dependence of carrier concentration and mobility. The respective scaling of MR and crossover field (B$_{c}$) from quadratic to linear MR with mobility and inverse of mobility describes the classical origin of large linear MR in this crystal as suggested by Parish and Littlewood (PL) model for disordered systems.

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