Researcher profile

Morteza Salehi

Morteza Salehi contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2011arXiv

In-Plane Magnetoresistance on the Surface of Topological Insulator

We study the tunneling magneto-transport properties of the Ferromagnetic Insulator-Normal Insulator-Ferromagnetic Insulator(F$\mid$N$\mid$F) and Ferromagnetic Insulator-Barrier Insulator-Ferromagnetic Insulator (F$\mid$B$\mid$F) junctions on the surface of topological insulator in which in-plane magnetization directions of both ferromagnetic sides can be parallel and antiparallel. We derive analytical expressions for electronic conductances of the two mentioned junctions with both parallel and antiparallel directions of magnetization and using them calculate magnetoresistance of the two junctions. We use thin barrier approximation for investigating the F$\mid$B$\mid$F junction. We find that although magnetoresistance of the F$\mid$N$\mid$F and F$\mid$B$\mid$F junctions are tunable by changing the strength of magnetization texture, they show different behaviors with variation of magnetization. In contrast to the magnetoresistance of F$\mid$N$\mid$F, magnetoresistance of F$\mid$B$\mid$F junctions shows very smooth enhance by increasing the strength of magnetization. We suggest an experimental set up to detect our predicted effects.

preprint2011arXiv

Signatures of d-Wave Symmetry on Thermal Dirac Fermions in Graphene-Based F/I/d Junctions

We study theoretically the behavior of thermal massless Dirac fermions inside graphene-based Ferromagnetic/Insulator/d-wave (s-wave) superconductor (F/I/d and F/I/S) junctions in the ballistic regime. Using the Dirac-BdG wave functions within the three regions and appropriate boundary conditions, the Andreev and Normal reflection coefficients are derived. By employing the obtained Andreev and Normal reflection coefficients the characteristics of heat current through the F/I/d and F/I/S junctions are investigated within the thin barrier approximation. We find that for s-wave superconductors, thermal conductance oscillates sinusoidally vs barrier strength. The finding persist for the values of $α$, the orientation of d-wave superconductor crystal in the $k$-space, below $π/4$. By increasing temperature, the thermal conductance is increased exponentially for small values of $α$ and for larger values the quantity is modified to exhibit a linear behavior at $α=π/4$ which is similar to Wiedemann-Franz law for metals in low temperatures.

preprint2011arXiv

Thermal Transport Properties of Graphene-Based F/S/F Junctions

We present an investigation of heat transport in gapless graphene-based Ferromagnetic /singlet Superconductor/Ferromagnetic (FG$\mid$SG$\mid$FG) junctions. We find that unlike uniform increase of thermal conductance vs temperature, the thermal conductance exhibits intensive oscillatory behavior vs width of the sandwiched s-wave superconducting region between the two ferromagnetic layers. This oscillatory form is occurred by interference of the massless Dirac fermions in graphene. Also we find that the thermal conductance vs exchange field $h$ displays a minimal value at $h/E_F\simeq 1$ within the low temperature regime where this finding demonstrates that propagating modes of the Dirac fermions in this value reach at their minimum numbers and verifies the previous results for electronic conductance. We find that for thin widths of superconducting region, the thermal conductance vs temperature shows linear increment i.e. $Γ\varpropto T$. At last we propose an experimental set-up to detect our predicted effects.