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Moritz H. Futscher

Moritz H. Futscher appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2020arXiv

Sequentially Deposited versus Conventional Nonfullerene Organic Solar Cells: Interfacial Trap States, Vertical Stratification, and Exciton Dissociation

Bulk-heterojunction (BHJ) non-fullerene organic solar cells prepared from sequentially deposited donor and acceptor layers (sq-BHJ) have recently been promising to be highly efficient, environmentally friendly, and compatible with large area and roll-to-toll fabrication. However, the related photophysics at donor-acceptor interface and the vertical heterogeneity of donor-acceptor distribution, critical for exciton dissociation and device performance, are largely unexplored. Herein, steady-state and time-resolved optical and electrical techniques are employed to characterize the interfacial trap states. Correlation with the luminescent efficiency of interfacial states and its non-radiative recombination, interfacial trap states are characterized to be about 50% more populated in the sq-BHJ than as-cast BHJ (c-BHJ), which probably limits the device voltage output. Cross-sectional energy-dispersive X-ray spectroscopy and ultraviolet photoemission spectroscopy depth profiling directly vizualize the donor-acceptor vertical stratification with a precision of 1-2 nm. From the proposed "needle" model, the high exciton dissociation efficiency is rationalized. Our study highlights the promise of sequential deposition to fabricate efficient solar cells, and points towards improving the voltage output and overall device performance via eliminating interfacial trap states.

preprint2019arXiv

Quantifying mobile ions in perovskite-based devices with temperature-dependent capacitance measurements: frequency versus time domain

Perovskites have proven to be a promising candidate for highly-efficient solar cells, light-emitting diodes, and X-ray detectors, overcoming limitations of inorganic semiconductors. However, they are notoriously unstable. The main reason for this instability is the migration of mobile ions through the device during operation, as they are mixed ionic-electronic conductors. Here we show how measuring the capacitance in both the frequency and the time domain can be used to study ionic dynamics within perovskite-based devices, quantifying activation energy, diffusion coefficient, sign of charge, concentration, and the length of the ionic double layer in the vicinity of the interfaces. Measuring the transient of the capacitance furthermore allows for distinguishing between ionic and electronic effects.