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Monica Pacheco

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Published work

2 published item(s)

preprint2013arXiv

Fano-Kondo and the Kondo-box regimes crossover in a quantum dot coupled to a quantum box

In this work,we study the Kondo effect of a quantum dot (QD) connected to leads and to a discrete set of one particle states provided by a quantum box represented by a quantum ring (QR) pierced by a magnetic flux side attached to the QD. The interplay between the bulk Kondo effect and the so called Kondo box regime is studied. In this system the QR energies can be continuously modified by the application of the magnetic field. The crossover between these two regimes is analyzed by changing the connection of the QD to the QR from the weak to the strong coupling regime. In the weak coupling regime, the differential conductance develops a sequence of Fano-Kondo antiresonances due to destructive interferences between the discrete quantum ring levels and the conducting Kondo channel provided by the leads. In the strong coupling regime the differential conductance has very sharp resonances when one of the Kondo discrete sub-level characterizing the Kondo box is tunned by the applied potential. The conductance, the current fluctuations and the Fano coefficient result to be the relevant physical magnitudes to be analyzed to reveal the physical properties of these two Kondo regimes and the crossover region between them. The results were obtained by using the Slave Boson Mean Field Theory (SBMFT).

preprint2011arXiv

Transport properties of graphene quantum dots

In this work we present a theoretical study of transport properties of a double crossbar junction composed by segments of graphene ribbons with different widths forming a graphene quantum dot structure. The systems are described by a single-band tight binding Hamiltonian and the Green's function formalism using real space renormalization techniques. We show calculations of the local density of states, linear conductance and I-V characteristics. Our results depict a resonant behavior of the conductance in the quantum dot structures which can be controlled by changing geometrical parameters such as the nanoribbon segments widths and relative distance between them. By applying a gate voltage on determined regions of the structure, it is possible to modulate the transport response of the systems. We show that negative differential resistance can be obtained for low values of gate and bias voltages applied.