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Mojtaba Ranjbar

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2 publications

preprint2018arXiv

Non-Reciprocal Spin Pumping in Asymmetric Magnetic Trilayers

In magnetic trilayer systems, spin pumping is generally addressed as a reciprocal mechanism characterized by one unique spin mixing conductance common to both interfaces. However, this assumption is questionable in cases where different types of interfaces are present in the material. Here, we present a general theory for analyzing spin pumping in cases with more than one unique interface. The theory is applied to analyze layer-resolved ferromagnetic resonance experiments on the trilayer system Ni20_{20}Fe80_{80}/Ru/Fe49_{49}Co49_{49}V2_2 where the Ru spacer thickness is varied to tune the indirect exchange coupling. The results show that the spin pumping in trilayer systems with dissimilar magnetic layers is non-reciprocal, with a surprisingly large difference between spin-pumping induced damping of different interfaces. Our findings have importance on dynamics of spintronic devices based on magnetic multilayer materials.

preprint2015arXiv

Tunable damping, saturation magnetization, and exchange stiffness of half-Heusler NiMnSb thin films

The half-metallic half-Heusler alloy NiMnSb is a promising candidate for applications in spintronic devices due to its low magnetic damping and its rich anisotropies. Here we use ferromagnetic resonance (FMR) measurements and calculations from first principles to investigate how the composition of the epitaxially grown NiMnSb influences the magnetodynamic properties of saturation magnetization MSM_S, Gilbert damping αα, and exchange stiffness AA. MSM_S and AA are shown to have a maximum for stoichiometric composition, while the Gilbert damping is minimum. We find excellent quantitative agreement between theory and experiment for MSM_S and αα. The calculated AA shows the same trend as the experimental data, but has a larger magnitude. Additionally to the unique in-plane anisotropy of the material, these tunabilities of the magnetodynamic properties can be taken advantage of when employing NiMnSb films in magnonic devices.

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