Wafer-Scale Integration of Piezo- and Ferroelectric Al0.64Sc0.36N Thin Films by Reactive Sputtering
Large-area deposition of Aluminium-Scandium-Nitride (Al1-xScxN) thin films with higher Sc content (x) remains challenging due to issues such as abnormal orientation growth, stress control, and the undesired crystal phase. These anomalies across the wafer hinder the development of high scandium-content AlScN films, which are critical for microelectromechanical systems applications. In this study, we report the sputter deposition of Al0.64Sc0.36N thin films from a 300 mm Al0.64Sc0.36 alloy target on 200 mm Si(100) wafers, achieving an exceptionally high deposition rate of 8.7 μm/h with less than 1% AOGs and controllable stress tuning. Comprehensive microstructural and electrical characterizations confirm the superior growth of high-quality Al0.64Sc0.36N films with exceptional wafer-average piezoelectric coefficients (d33,f =15.62 pm/V and e31,f = -2.9 C/m2) owing to low point defects density and grain mosaicity. This was accomplished through the implementation of an optimized seed layer and a refined electrode integration strategy, along with optimal process conditions. The wafer yield and device failure rates are analysed and correlated with the average stress of the films and their stress profiles along the diameter. The resulting films show excellent uniformity in structural, compositional, and piezoelectric properties across the entire 200 mm wafer, underscoring their strong potential for next-generation MEMS applications.