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Mohammad H. Fauzi

Mohammad H. Fauzi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2022arXiv

Even-denominator fractional quantum Hall state in conventional triple-gated quantum point contact

The even-denominator states have attracted considerable attention owing to their possible applications in future quantum technologies. In this letter, we first report a 3/2 diagonal resistance, indicating the existence of a 3/2 state in a nanometer-sized triple-gated quantum point contact (QPC) fabricated on a high-mobility (not ultra-high-mobility) single-layer two-dimensional (2D) GaAs wafer. The center gate plays a crucial role in realizing the QPC's 3/2 state. Our observation of the 3/2 state using a conventional QPC device, which is a suitable building block for semiconductor quantum devices, paves a new path for the development of semiconductor-based quantum technologies.

preprint2016arXiv

Fabry-Pérot interference in a triple-gated quantum point contact

We demonstrated that a triple-gated GaAs quantum point contact, which has an additional surface gate between a pair of split gates to strengthen the lateral confinement, produces the well-defined quantized conductance and Fabry-Pérot-type (FP-type) oscillations on it even using a relatively low mobility wafer. A one-dimensional phenomenological model potential was developed to explain the oscillatory behavior. By combining the model calculations and dc bias spectroscopy, we obtained detailed information about the energy scales of the oscillatory structures. The relationships between the FP-type oscillations and the anomaly below the first plateau will be addressed.