Researcher profile

Mohammad Bagheri

Mohammad Bagheri contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

Lateral Graphene-Metallene Interfaces at the Nanoscale

Metallenes are atomically thin, nonlayered two-dimensional materials. While they have appealing properties, their isotropic metallic bonding makes their stabilization difficult and presents considerable challenges to their synthesis and practical applications. However, their stabilization can still be achieved by suspending them in the pores of two-dimensional template materials, making the properties of lateral interfaces of metallenes scientifically relevant. Here, we combined density-functional theory and universal machine-learning interatomic potentials to study lateral interfaces between graphene and 45 metallenes with various profiles. We optimized the interfaces and analyzed their energies, electronic structures, and stabilities at room temperature, defect formations, and structural deformations. While broad trends were identified using machine-learning analysis of all interfaces, density-functional theory was the main tool for studying the microscopic properties of selected elements. We found that the interfaces are the most stable energetically and with respect to lattice mismatch, defect formation, and lateral strain when their profiles were geometrically smooth. The most stable interfaces are found for transition metals. In addition, we demonstrate how universal machine-learning interatomic potentials now offer the accuracy required for the modeling of graphene-metallene interfaces. By systematically expanding the understanding of metallenes' interface properties, we hope these results guide and accelerate their synthesis to enable future applications and benefit from metallenes' appealing properties.

preprint2022arXiv

Screening 0D materials for 2D nanoelectronics applications

As nanoelectronic devices based on two-dimensional (2D) materials are moving towards maturity, optimization of the properties of the active 2D material must be accompanied by equal attention to optimizing the properties of and the interfaces to the other materials around it, such as electrodes, gate dielectrics, and the substrate. While these are usually either 2D or 3D materials, recently K. Liu et al. [Nat. Electron. 4, 906 (2021)] reported on the use of zero-dimensional (0D) material, consisting of vdW-bonded Sb$_2$O$_3$ clusters, as a highly promising insulating substrate and gate dielectric. Here, we report on computational screening study to find promising 0D materials for use in nanoelectronics applications, in conjunction with 2D materials in particular. By combining a database and literature searches, we found 16 materials belonging to 6 structural prototypes with high melting points and high band gaps, and a range of static dielectric constants. We carried out additional first-principles calculations to evaluate selected technologically relevant material properties, and confirmed that all these materials are van der Waals-bonded, thus allowing for facile separation of 0D clusters from the 3D host and also weakly perturbing the electronic properties of the 2D material after deposition.