Researcher profile

Mohammad Alidoosti

Mohammad Alidoosti contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2022arXiv

$σ_h$ symmetry and electron-phonon interaction in two-dimensional crystalline systems

The coupling of electrons and phonons is governed wisely by the symmetry properties of the crystal structures. In particular, for two-dimensional (2D) systems, it has been suggested that the electrons do not couple to phonons with pure out-of-plane distortion, as long as there is a $σ_h$ symmetry. We show that such a statement is correct when constituents of the unit-cell layer are only located in the $σ_h$ symmetric plane; a prominent example of such a system is graphene. For those 2D crystals in which atoms are vertically located away from the horizontal symmetric plane (e.g., 1H transition metal dichalcogenides), acoustic flexural modes do not couple to the electrons up to linear order, while optical flexural phonons, which preserve $σ_h$ symmetry, do couple with the electrons. Our conclusions are supported by an analytic argument together with numerical calculations using density functional perturbation theory.

preprint2021arXiv

Charge density wave and superconducting phase in monolayer InSe

In this paper, the completed investigation of a possible superconducting phase in monolayer indium selenide is determined using first-principles calculations for both the hole and electron doping systems. The hole-doped dependence of the Fermi surface is exclusively fundamental for monolayer InSe. It leads to the extensive modification of the Fermi surface from six separated pockets to two pockets by increasing the hole densities. For low hole doping levels of the system, below the Lifshitz transition point, superconductive critical temperatures $T_c \sim 55-75$ K are obtained within anisotropic Eliashberg theory depending on varying amounts of the Coulomb potential from 0.2 to 0.1. However, for some hole doping above the Lifshitz transition point, the combination of the temperature dependence of the bare susceptibility and the strong electron-phonon interaction gives rise to a charge density wave that emerged at a temperature far above the corresponding $T_c$. Having included non-adiabatic effects, we could carefully analyze conditions for which either a superconductive or charge density wave phase occurs in the system. In addition, monolayer InSe becomes dynamically stable by including non-adiabatic effects for different carrier concentrations at room temperature.

preprint2020arXiv

Low-loss two-dimensional plasmon modes in antimonene

The effects of spin-orbit (SOC) and electron-phonon coupling on the collective excitation of doped monolayer Sb$_2$ are investigated using density functional and many-body perturbation theories. The spin-orbit coupling is exclusively important for the monolayer Sb$_2$ and it leads to the reconstruction of the electronic band structure. In particular, plasmon modes of monolayer Sb$_2$ are quite sensitive to the SOC and are characterized by very low damping rates owing to small electron-phonon scatterings. Our results show plasmons in antimonene are significantly less damped compared to monolayer graphene when plasmon energies are $\hbar ω> 0.2$ eV due to smaller plasmon-phonon coupling in the former material.