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Source author record

Mit H. Naik

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cond-mat.mtrl-scicond-mat.mes-hall

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7 publications

preprint2022arXiv

Moiré induced topology and flat bands in twisted bilayer WSe2_2: A first-principles study

We study the influence of strong spin-orbit interaction on the formation of flat bands in relaxed twisted bilayer WSe2_2. Flat bands, well separated in energy, emerge at the band edges for twist angles (θθ) near 0∘^{\circ} and 60∘^{\circ}. For θθ near 0∘^{\circ}, the interlayer hybridization together with a moiré potential determines the electronic structure. The bands near the valence band edge have nontrivial topology, with Chern numbers equal to +1 or −-1. We propose that the nontrivial topology of the first band can be probed experimentally for twist angles less than a critical angle of 3.5∘^{\circ}. For θθ near 60∘^{\circ}, the flattening of the bands arising from the K point of the unit cell Brillouin zone is a result of atomic rearrangements in the individual layers. Our findings on the flat bands and the localization of their wavefunctions for both ranges of θθ match well with recent experimental observations.

Open access
preprint2022arXiv

Nature of novel moiré exciton states in WSe2_2/WS2_2 heterobilayers

Moiré patterns of transition metal dichalcogenide (TMD) heterobilayers have proven to be an ideal platform to host unusual correlated electronic phases, emerging magnetism, and correlated exciton physics. While the existence of novel moiré excitonic states is established through optical measurements, the microscopic nature of these states is still poorly understood, often relying on empirically fit models. Here, combining large-scale first-principles GW-BSE calculations and micro-reflection spectroscopy, we identify the nature of the exciton resonances in WSe2_2/WS2_2 moiré superlattices, discovering a surprisingly rich set of moiré excitons that cannot be even qualitatively captured by prevailing continuum models. Our calculations reveal moiré excitons with distinct characters, including modulated Wannier excitons and previously unindentified intralayer charge-transfer excitons. Signatures of these distinct excitonic characters are confirmed experimentally via the unique carrier-density and magnetic-field dependences of different moiré exciton resonances. Our study highlights the highly non-trivial exciton states that can emerge in TMD moiré superlattices, and suggests novel ways of tuning many-body physics in moiré systems by engineering excited-states with specific spatial characters.

Open access
preprint2021arXiv

Twister: Construction and structural relaxation of commensurate moiré superlattices

Introduction of a twist between layers of two-dimensional materials which leads to the formation of a moiré pattern is an emerging pathway to tune the electronic, vibrational and optical properties. The fascinating properties of these systems is often linked to large-scale structural reconstruction of the moiré pattern. Hence, an essential first step in the theoretical study of these systems is the construction and structural relaxation of the atoms in the moiré superlattice. We present the Twister package, a collection of tools that constructs commensurate superlattices for any combination of 2D materials and also helps perform structural relaxations of the moiré superlattice. Twister constructs commensurate moiré superlattices using the coincidence lattice method and provides an interface to perform structural relaxations using classical forcefields.

Open access
preprint2020arXiv

Native Point Defects in Mono-- and Bi--layer Phosphorene

We study the stability and electronic properties of intrinsic point defects, vacancy and self-interstitial, in mono- and bi-layer phosphorene. We calculate the formation energies, quasiparticle defect states and charge transition levels (CTLs) of these defects using \textit{ab initio} density functional theory (DFT) and GW approximation to the electron self-energy. Using the DFT + GW two paths formalism for studying interstitial in monolayer phosphorene, we show that with the inclusion of electrostatic corrections CTLs can be calculated reliably. Our calculations show that all the native point defects have low formation energies 0.9-1.6 eV in neutral state. Furthermore, we find that vacancy in phosphorene behaves as an acceptor-like defect which can explain the p-type conductivity in phosphorene. On the other hand, interstitial can show both acceptor- and donor-like behaviour.

Open access
preprint2020arXiv

Origin and Evolution of Ultraflatbands in Twisted Bilayer Transition Metal Dichalcogenides: Realization of Triangular Quantum Dot Array

Using a multiscale computational approach, we probe the origin and evolution of ultraflatbands in moiré superlattices of twisted bilayer MoS2_2, a prototypical transition metal dichalcogenide. Unlike twisted bilayer graphene, we find no unique magic angles in twisted bilayer MoS2_2 for flatband formation. Ultraflatbands form at the valence band edge for twist angles (θθ) close to 0∘^\circ and at both the valence and conduction band edges for θθ close to 60∘^\circ, and have distinct origins. Forθ θ close to 0∘^\circ, inhomogeneous hybridization in the reconstructed moiré superlattice is sufficient to explain the formation of flatbands. For θθ close to 60∘^\circ, additionally, local strains cause the formation of modulating triangular potential wells such that electrons and holes are spatially separated. This leads to multiple energy-separated ultraflatbands at the band edges closely resembling eigenfunctions of a quantum particle in an equilateral triangle well. Twisted bilayer transition metal dichalcogenides are thus suitable candidates for the realisation of ordered quantum dot array.

Open access
preprint2019arXiv

Phonons in Twisted Transition Metal Dichalcogenide Bilayers ("Twistnonics"): Ultra-soft Phasons, and a transition from Superlubric to Pinned Phase

The tunability of the interlayer coupling by twisting one layer with respect to another layer of two-dimensional materials provides a unique way to manipulate the phonons and related properties. We refer to this engineering of phononic properties as "Twistnonics". We study the effects of twisting on low-frequency shear (SM) and layer breathing (LBM) modes in transition metal dichalcogenide (TMD) bilayer using atomistic classical simulations. We show that these low-frequency modes are extremely sensitive to twist and can be used to infer the twist angle. We find unique "ultra-soft" phason modes (frequency ≲1 cm−1\lesssim 1\ \mathrm{cm^{-1}}, comparable to acoustic modes) for any non-zero twist, corresponding to an \textit{effective} translation of the moir{é} lattice by relative displacement of the constituent layers in a non-trivial way. Unlike the acoustic modes, the velocity of the phason modes is quite sensitive to twist angle. As twist angle decreases, (θ≲3∘, ≳57∘θ\lesssim 3^{\circ},\ \gtrsim 57^{\circ}) the ultra-soft modes represent the acoustic modes of the "emergent" soft moir{é} scale lattice. Also, new high-frequency SMs appear, identical to those in stable bilayer TMD (θ=0°/60°θ= 0\degree/60\degree), due to the overwhelming growth of stable stacking regions in relaxed twisted structures. Furthermore, we find remarkably different structural relaxation as θ→0∘θ\to 0^{\circ}, →60∘\to 60^{\circ} due to sub-lattice symmetry breaking. Our study reveals the possibility of an intriguing θθ dependent superlubric to pinning behavior and of the existence of ultra-soft modes in \textit{all} two-dimensional (2D) materials.

Open access
preprint2015arXiv

Probing 2D Black Phosphorus by Quantum Capacitance Measurements

Two-dimensional materials and their heterostructures have emerged as a new class of materials for not only fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to this class of materials. Its strong in plane anisotropy makes BP a unique material to make conceptually new type of electronic devices. However, the global density of states (DOS) of BP in device geometry has not been measured experimentally. Here we report the quantum capacitance measurements together with conductance measurements on a hBN protected few layer BP (∼\sim 6 layer) in a dual gated field effect transistor (FET) geometry. The measured DOS from our quantum capacitance is compared with the density functional theory (DFT). Our results reveal that the transport gap for quantum capacitance is smaller than that in conductance measurements due to the presence of localized states near the band edge. The presence of localized states is confirmed by the variable range hopping seen in our temperature-dependence conductivity. A large asymmetry is observed between the electron and hole side. The asymmetric nature is attributed to the anisotropic band dispersion of BP. Our measurements establish the uniqueness of quantum capacitance in probing the localized states near the band edge, hitherto not seen in the conductance measurements.

Open access

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