Source author record

Miroslav Kotrla

Miroslav Kotrla appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2012arXiv

The first-principles study of thermodynamical properties of random magnetic overlayers on fcc-Cu(001) substrate

We present the theoretical study of thermodynamical properties of fcc-Cu(001) substrate covered by iron-cobalt monolayer as well as by incomplete iron layer. The effective two-dimensional Heisenberg Hamiltonian is constructed from first principles and properties of exchange interactions are investigated. The Curie temperatures are estimated using the Monte-Carlo (MC) simulations and compared with a simplified approach using the random-phase approximation (RPA) in connection with the virtual-crystal approach (VCA) to treat randomness in exchange integrals. Calculations indicate a weak maximum of the Curie temperature as a function of composition of the iron-cobalt overlayer. While a good quantitative agreement between RPA-VCA and MC was found for iron-cobalt monolayer, the RPA-VCA approach fails quantitatively for low coverage due to the magnetic percolation effect. We also present the study of the effect of alloy disorder on the shape of magnon spectra of random overlayers.

preprint2008arXiv

Heterogeneous nucleation and adatom detachment at 1-D growth of Indium on Si(100)-2x1

Growth of atomic indium chains - 1D islands - on the Si(100)-2x1 surface was observed by scanning tunneling microscopy (STM) at room temperature and simulated by means of a kinetic Monte Carlo method. Density of indium islands and island size distribution were obtained for various deposition rates and coverage. STM observation of growth during deposition of indium provided information on growth kinetics and relaxation of grown layers. Important role of C-type defects at adsorption of metal atoms was observed. Measured growth characteristics were simulated using a microscopic model with anisotropic surface diffusion and forbidden zones along the metal chains. An analysis of experimental and simulation data shows that detachment of indium adatoms from the chains substantially influences a growth scenario and results in monotonously decreasing chain length distribution function at low coverage. Diffusion barriers determined from the simulations correspond to almost isotropic diffusion of indium adatoms on the surface. The results are discussed with respect to data reported in earlier papers for other metals.