Researcher profile

Mircea Dinca

Mircea Dinca contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2019arXiv

Molecular understanding of charge storage and charging dynamics in supercapacitors with MOF electrodes and ionic liquid electrolytes

We present a computational microscopy analysis (targeted molecular dynamics simulations) of the structure and performance of conductive metal organic framework (MOF) electrodes in supercapacitors with room temperature ionic liquids. The molecular modeling predicts the characteristic shapes of the potential dependence of electrode capacitance, relying on the structure of MOF electrodes and particularly how ions transport and reside in MOFs under polarization. Transmission line model was adopted to characterize the charging dynamics process and build up a bridge to evaluate the capacitive performance of practical supercapacitor devices at macroscale from the simulation-obtained data at nanoscale. Such nanoscale-to-macroscale analysis demonstrates the potential of MOF supercapacitors for achieving unprecedentedly high volumetric energy and power densities. The investigation gives molecular insights into the preferred structures of MOF for achieving these results, which could provide a blueprint for future experimental characterization of these new systems.

preprint2016arXiv

Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect

Based on recently synthesized Ni3C12S12 class 2D metal-organic frameworks, we predict electronic properties of M3C12S12 and M3C12O12, where M is Zn, Cd, Hg, Be, or Mg with no M orbital contributions to bands near Fermi level. For M3C12S12, their band structures exhibit double Dirac cones with different Fermi velocities that are n and p type, respectively, which are switchable by few-percent strain. The crossing of two cones are symmetry-protected to be non-hybridizing, leading to two independent channels in 2D node-line semimetals at the same k-point akin to spin-channels in spintronics, rendering conetronics device possible. The node line rings right at their crossing, which are both electron and hole pockets at the Fermi level, can give rise to magnetoresistance that will not saturate when the magnetic field is infinitely large, due to perfect n-p compensation. For M3C12O12, together with conjugated metal-tricatecholate polymers M3(HHTP)2, the spin-polarized slow Dirac cone center is pinned precisely at the Fermi level, making the systems conducting in only one spin or cone channel. Quantum anomalous Hall effect can arise in MOFs with non-negligible spin-orbit coupling like Cu3C12O12. Compounds of M3C12S12 and M3C12O12 with different M, can be used to build spintronic and cone-selecting heterostructure devices, tunable by strain or electrostatic gating.