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Minori Goto

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4works
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4 publications

preprint2020arXiv

Control of spin-orbit torques by interface engineering in topological insulator heterostructures

(Bi1−x_{1-x}Sbx_x)2_2Te3_3 topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the magnetization of a ferromagnet (FM). The origin of the torques, however, remains elusive, while the implications of hybridized states and the strong material intermixing at the TI/FM interface are essentially unexplored. By combining interface chemical analysis and spin-transfer ferromagnetic resonance (ST-FMR) measurements, we demonstrate that intermixing plays a critical role in the generation of SOTs. By inserting a suitable normal metal spacer, material intermixing is reduced and the TI properties at the interface are largely improved, resulting in strong variations in the nature of the SOTs. A dramatic enhancement of a field-like torque, opposing and surpassing the Oersted-field torque, is observed, which can be attributed to the non-equilibrium spin density in Rashba-split surface bands and to the suppression of spin memory loss.

preprint2020arXiv

Skyrmion Brownian circuit implemented in a continuous ferromagnetic thin film

The fabrication of a skyrmion circuit which stabilizes skyrmions is important to realize micro- to nano-sized skyrmion devices. One example of promising skyrmion-based device is Brownian computers, which have been theoretically proposed, but not realized. It would require a skyrmion circuit in which the skyrmion is stabilized and easily movable. However, the usual skyrmion circuits fabricated by etching of the ferromagnetic film decrease the demagnetization field stabilizing the skyrmions, and thus prevent their formation. In this study, a skyrmion Brownian circuit implemented in a continuous ferromagnetic film with patterned SiO2_2 capping to stabilize the skyrmion formation. The patterned SiO2_2 capping controls the saturation field of the ferromagnetic layer and forms a wire-shaped skyrmion potential well, which stabilizes skyrmion formation in the circuit. Moreover, we implement a hub (Y-junction) circuit without pinning sites at the junction by patterned SiO2_2 capping. This technique enables the efficient control of skyrmion-based memory and logic devices, as well as Brownian computers.

preprint2019arXiv

Investigation of gating effect in Si spin MOSFET

A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while keeping constant electric current. An unprecedented reduction in the spin accumulation voltages in a Si spin MOSFET under negative gate voltage applications is observed in a high electric bias current regime. To support our claim, the electric bias current dependence of the spin accumulation voltage under the gate voltage applications is investigated in detail and compared to a spin drift diffusion model including the conductance mismatch effect. We proved that the drastic decrease of the mobility and spin lifetime in the Si channel is due to the optical phonon emission at the high electric bias current, which consequently reduced the spin accumulation voltage.

preprint2011arXiv

Electric spectroscopy of vortex states and dynamics in magnetic disks

Spin-polarized radio frequency (RF) currents and RF-Oersted fields resonantly excite a magnetic vortex core confined in a micron-scale soft magnetic disk. In this study, we measured the rectifying voltage spectra caused by the anisotropic magnetoresistance oscillation due to the gyration of the vortex with different polarity and chirality. The measured spectra are presented such that we can determine the vortex properties and strength of the spin torques and Oersted field accurately and directly through analytical calculation.

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