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Mingqiang Liu

Mingqiang Liu contributes to research discovery and scholarly infrastructure.

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preprint2021arXiv

A family of simple non-weight modules over the twisted $N=2$ superconformal algebra

We construct a class of non-weight modules over the twisted $N=2$ superconformal algebra $\T$. Let $\mathfrak{h}=\C L_0\oplus\C G_0$ be the Cartan subalgebra of $\T$, and let $\mathfrak{t}=\C L_0$ be the Cartan subalgebra of even part $\T_{\bar 0}$. These modules over $\T$ when restricted to the $\mathfrak{h}$ are free of rank $1$ or when restricted to the $\mathfrak{t}$ are free of rank $2$. We provide the sufficient and necessary conditions for those modules being simple, as well as giving the sufficient and necessary conditions for two $\T$-modules being isomorphic. We also compute the action of an automorphism on them. Moreover, based on the weighting functor introduced in \cite{N2}, a class of intermediate series modules $A_σ$ are obtained. As a byproduct, we give a sufficient condition for two $\T$-modules are not isomorphic.

preprint2020arXiv

High Yield Growth and Doping of Black Phosphorus with Tunable Electronic Properties

Black phosphorus (BP) has recently attracted significant interest due to its unique electronic and optical properties. Doping is an effective strategy to tune a material's electronic structures, however, the direct and controllable growth of BP with a high yield and its doping remain a great challenge. Here we report an efficient short-distance transport (SDT) growth approach and achieve the controlled growth of high quality BP with the highest yield so far, where 98% of the red phosphorus is converted to BP. The doping of BP by As, Sb, Bi, Se and Te are also achieved by this SDT growth approach. Spectroscopic results show that doping systematically changes its electronic structures including band gap, work function, and energy band position. As a result, we have found that the air-stability of doped BP samples (Sb and Te-doped BP) improves compared with pristine BP, due to the downshift of the conduction band minimum with doping. This work develops a new method to grow BP and doped BP with tunable electronic structures and improved stability, and should extend the uses of these class of materials in various areas.

preprint2015arXiv

Presenting affine Schur Algebras

The universal enveloping algebra ${\mathcal U}({\widehat{\frak{gl}}_n})$ of ${\widehat{\frak{gl}}_n}$ was realized in \cite[Ch. 6]{DDF} using affine Schur algebras. In particular some explicit multiplication formulas in affine Schur algebras were derived. We use these formulas to study the structure of affine Schur algebras. In particular, we give a presentation of the affine Schur algebra ${\mathcal S}_{\!\vartriangle}(n,r)_{\mathbb Q}$.