Source author record

Mincheol Shin

Mincheol Shin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat Databases

Catalog footprint

What is connected

5works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2013arXiv

Simulation Study of Ge p-type Nanowire Schottky Barrier MOSFETs

Ambipolar currents in Germanium p-type nanowire Schottky barrier MOSFETs were calculated fully quantum-mechanically by using the multi-band k.p method and the non-equilibrium Green's function approach. We investigated the performance of devices with 100, 110, and 111 channel orientations, respectively, by varying the nanowire width, Schottky barrier height, and EOT. The 111 oriented devices showed the best performance. In comparison to Si as a channel material, Ge is more desirable because more current can be injected into the channel, resulting in steeper subthreshold slope and higher on-state current. Our calculations predict that the Ge channel devices should have an EOT gain of 0.2-0.5 nm over Si channel devices.

preprint2013arXiv

Surface-Roughness-Limited Mean Free Path in Si Nanowire FETs

The mean free path (MFP) in silicon nanowire field effect transistors limited by surface roughness scattering (SRS) is calculated with the non-perturbative approach utilizing the non-equilibrium Green's function method. The entrance scattering effect associated with finiteness of the channel length is identified and a method to eliminate it in the calculation of the MFP is developed. The behavior of the MFP with respect to channel length (L), channel width (W), and the root-mean-square (RMS) of the surface roughness is investigated extensively. Our major findings are that the single parameter, RMS/W, can be used as a good measure for the strength of the SRS effects and that the overall characteristics of the MFP are determined by the parameter. In particular, the MFP exponentially decreases with the increase of RMS/W and the MFP versus the gate electric field shows a distinctively different behavior depending on whether the strength of the SRS effects measured by RMS/W is smaller or greater than 0.06.

preprint2011arXiv

B+-tree Index Optimization by Exploiting Internal Parallelism of Flash-based Solid State Drives

Previous research addressed the potential problems of the hard-disk oriented design of DBMSs of flashSSDs. In this paper, we focus on exploiting potential benefits of flashSSDs. First, we examine the internal parallelism issues of flashSSDs by conducting benchmarks to various flashSSDs. Then, we suggest algorithm-design principles in order to best benefit from the internal parallelism. We present a new I/O request concept, called psync I/O that can exploit the internal parallelism of flashSSDs in a single process. Based on these ideas, we introduce B+-tree optimization methods in order to utilize internal parallelism. By integrating the results of these methods, we present a B+-tree variant, PIO B-tree. We confirmed that each optimization method substantially enhances the index performance. Consequently, PIO B-tree enhanced B+-tree's insert performance by a factor of up to 16.3, while improving point-search performance by a factor of 1.2. The range search of PIO B-tree was up to 5 times faster than that of the B+-tree. Moreover, PIO B-tree outperformed other flash-aware indexes in various synthetic workloads. We also confirmed that PIO B-tree outperforms B+-tree in index traces collected inside the Postgresql DBMS with TPC-C benchmark.

preprint2011arXiv

Feasibility, Accuracy and Performance of Contact Block Reduction method for multi-band simulations of ballistic quantum transport

Numerical utilities of the Contact Block Reduction (CBR) method in evaluating the retarded Green's function, are discussed for 3-D multi-band open systems that are represented by the atomic tight-binding (TB) and continuum k\cdotp (KP) band model. It is shown that the methodology to approximate solutions of open systems which has been already reported for the single-band effective mass model, cannot be directly used for atomic TB systems, since the use of a set of zincblende crystal grids makes the inter-coupling matrix be non-invertible. We derive and test an alternative with which the CBR method can be still practical in solving TB systems. This multi-band CBR method is validated by a proof of principles on small systems, and also shown to work excellent with the KP approach. Further detailed analysis on the accuracy, speed, and scalability on high performance computing clusters, is performed with respect to the reference results obtained by the state-of- the-art Recursive Green's Function and Wavefunction algorithm. This work shows that the CBR method could be particularly useful in calculating resonant tunneling features, but show a limited practicality in simulating field effect transistors (FETs) when the system is described with the atomic TB model. Coupled to the KP model, however, the utility of the CBR method can be extended to simulations of nanowire FETs.

preprint1998arXiv

Quantum vortex creep :Hall and dissipative tunneling

Within the framework of the path-integral approach we study the quantum vortex creep for the situation where both the Hall and the dissipative dynamics are simultaneously present. We calculate the relaxation rate and the crossover temperature separating the thermal activation and the quantum tunneling processes for anisotropic or multilayer superconductors. The results are compared with the available experimental data.