Researcher profile

Miloud Mekkaoui

Miloud Mekkaoui contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2022arXiv

Group delay time of fermions in graphene through tilted potential barrier

The group delay time of Dirac fermions subjected to a tilting barrier potential along the $ x $-axis is investigated in graphene. We start by finding the eigenspinor solution of the Dirac equation and then relating it to incident, reflected, and transmitted beam waves. This relationship allows us to compute the group delay time in transmission and reflection by obtaining the corresponding phase shifts. We discovered that the barrier width, incident energy, and incident angle can all be used to modify the group delay time, and that the particles travel through the barrier at the Fermi velocity $ v_F $. Our findings also show that the transmission group delay might be controlled, and that gate voltage control could be useful in graphene-based tilting barriers.

preprint2022arXiv

Strain effect on Goos-Hänchen shifts and group delay time in gapped graphene barrier

We investigate the strain effect on the Goos-Hänchen (GH) shifts and group delay time for transmitted Dirac fermions in gapped graphene through a single barrier potential. The solutions of energy spectrum are used to compute the transmission probabilities together with the GH shifts and group delay time. Our results show that the two last quantities are strongly depending to weather the strain is applied along armchair or zigzag directions. In particular it found that both of quantities can be enhanced with the applied strain.

preprint2021arXiv

Strain Effect on Transmission in Graphene Laser Barrier

We investigate the strain effect along armchair and zigzag directions on the tunneling transport of Dirac fermions in graphene laser barrier through a time dependent potential along y-axis. Our system is composed of three regions and the central one is subjected to a deformation of strength S. Based on Dirac equation and the Floquet approach, we determine the eigenvalues and eigenspinors for each region. Using the boundary conditions at interfaces together with the transfer matrix method we identify the transmission in the different Floquet sideband states as function of the physical parameters. In the strainless case, we show that the transmisson of central band decreases for smaller values of the barrier width and rapidly oscillates with different amplitude for larger ones. Whereas the transmission for the first sidebands increases from zero and shows a damped oscillatory profile. It is found that the number of oscillations in all transmission channels reduces with increasing the strength of armchair strain but becomes more important by switching the deformation to zigzag. Moreover, it is observed the appearance of Fano type resonance peaks by altering the amplitude and the frequency of the laser field.

preprint2020arXiv

Confinement in Gapped Graphene with Magnetic Flux

We study the propagation of electrons in a circular quantum dot of gapped graphene subject to the magnetic flux $ϕ$. We present analytical expressions for the eigenstates, scattering coefficients, scattering efficiency and radial component of the reflected current. We identify different scattering regimes as a function of the physical parameters such as the incident electronic energy, potential barrier, radius of quantum dot, gap and $ϕ$. We choose two values of the flux $ϕ=1/2, 3/2$ and show that for low energy of the incident electron, the scattering resonances appear and the far-field scattered current presents distinct preferred scattering directions.

preprint2020arXiv

Goos-Hänchen Shifts in Gapped Graphene subject to External Fields

We study Dirac fermions in gapped graphene that are subjected to a magnetic field and a potential barrier harmonically oscillating in time. The tunneling modes inside the gap and the associated Goos-Hänchen (GH) shifts are analytically investigated. We show that the GH shifts in transmission for the central band and the first two sidebands change sign at the Dirac points $ε+l\hbar\tildeω$ $(l=0,\pm 1)$. We also find that the GH shifts can be either negative or positive and becomes zero at transmission resonances.

preprint2020arXiv

Time-dependent Goos-Hänchen Shifts in Gapped Graphene

We study the Goos-Hänchen (GH) shifts for transmitted Dirac fermions in gapped graphene through a single barrier structure having a time periodic oscillating component. Our analysis shows that the GH shifts in transmission for central band $l=0$ and two first sidebands $l=\pm1$ change sign at the Dirac points $E=V+l\hbarω$. In particular the GH shifts inbtransmission exhibit enhanced peaks at each bound state associated with the single barrier when the incident angle is less than the critical angle associated with total reflection. Klein tunneling, reflected by perfect transmission at normal incidence, is also preserved in the presence of an oscillating barrier.