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Michele Franceschini

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cond-mat.mtrl-sci Information Theory math.IT

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preprint2013arXiv

Rewritable storage channels with hidden state

Many storage channels admit reading and rewriting of the content at a given cost. We consider rewritable channels with a hidden state which models the unknown characteristics of the memory cell. In addition to mitigating the effect of the write noise, rewrites can help the write controller obtain a better estimate of the hidden state. The paper has two contributions. The first is a lower bound on the capacity of a general rewritable channel with hidden state. The lower bound is obtained using a coding scheme that combines Gelfand-Pinsker coding with superposition coding. The rewritable AWGN channel is discussed as an example. The second contribution is a simple coding scheme for a rewritable channel where the write noise and hidden state are both uniformly distributed. It is shown that this scheme is asymptotically optimal as the number of rewrites gets large.

preprint2010arXiv

Phase change memory technology

We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called phase change materials. PCM technology has made rapid progress in a short time, having passed older technologies in terms of both sophisticated demonstrations of scaling to small device dimensions, as well as integrated large-array demonstrators with impressive retention, endurance, performance and yield characteristics. We introduce the physics behind PCM technology, assess how its characteristics match up with various potential applications across the memory-storage hierarchy, and discuss its strengths including scalability and rapid switching speed. We then address challenges for the technology, including the design of PCM cells for low RESET current, the need to control device-to-device variability, and undesirable changes in the phase change material that can be induced by the fabrication procedure. We then turn to issues related to operation of PCM devices, including retention, device-to-device thermal crosstalk, endurance, and bias-polarity effects. Several factors that can be expected to enhance PCM in the future are addressed, including Multi-Level Cell technology for PCM (which offers higher density through the use of intermediate resistance states), the role of coding, and possible routes to an ultra-high density PCM technology.