Source author record

Michele B. Rota

Michele B. Rota appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
3topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2022arXiv

Daylight entanglement-based quantum key distribution with a quantum dot source

Entanglement-based quantum key distribution can enable secure communication in trusted node-free networks and over long distances. Although implementations exist both in fiber and in free space, the latter approach is often considered challenging due to environmental factors. Here, we implement a quantum communication protocol during daytime for the first time using a quantum dot source. This technology presents advantages in terms of narrower spectral bandwidth -- beneficial for filtering out sunlight -- and negligible multiphoton emission at peak brightness. We demonstrate continuous operation over the course of three and a half days, across an urban 270-m-long free-space optical link, under different light and weather conditions.

preprint2022arXiv

Surface passivation and oxide encapsulation to improve optical properties of a single GaAs quantum dot close to the surface

Epitaxial GaAs quantum dots grown by droplet etching have recently shown excellent properties as sources of single photons as well as entangled photon pairs. Integration in some nanophotonic structures requires surface-to-dot distances of less than 100 nm. This demands a surface passivation scheme, which could be useful to lower the density of surface states. To address this issue, sulphur passivation with dielectric overlayer as an encapsulation is used for surface to QD distances of 40 nm, which results in the partial recovery of emission linewidths to bulk values as well as in the increase of the photoluminescence intensity.