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Michele Amato

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cond-mat.mtrl-sci

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preprint2022arXiv

Interplay of quantum confinement and strain effects in type I to type II transition in Ge/Si core-shell nanocrystals

The electronic properties of hydrogenated, spherical, Si/Ge and Ge/Si core-shell nanocrystals with a diameter ranging from 1.8 to 4.0 nm are studied within Density Functional Theory. Effects induced by quantum confinement and strain on the near-band-edge states localization, as well as the band-offset properties between Si and Ge regions, are investigated in detail. On the one hand, we prove that Si(core)/Ge(shell) nanocrystals always show a type II band-offset alignment, with the HOMO mainly localized on the Ge shell region and the LUMO mainly localized on the Si core region. On the other hand, our results point out that a type II offset cannot be observed in small (diameter less than 3 nm) Ge(core)/Si(shell) nanocrystals. In these systems, quantum confinement and strain drive the near-band-edge states to be mainly localized on Ge atoms inducing a type I alignment. In larger Ge(core)/Si(shell) nanocrystals, instead, the formation of a type II offset can be engineered by playing with both core and shell thickness. The conditions that favor the transition from a type I to a type II alignment for Ge(core)/Si(shell) nanocrystals are discussed in detail.

preprint2020arXiv

Extrinsic doping in group IV hexagonal-diamond type crystals

Over the last few years, group IV hexagonal-diamond type crystals have acquired great attention in semiconductor physics thanks to the appearance of novel and very effective growth methods. However, many questions remain unaddressed on their extrinsic doping capability and on how it compares to those of diamond-like structures. This point is here investigated through numerical simulations conducted in the framework of the Density Functional Theory (DFT). The comparative analysis for group III and V dopant atoms shows that: i) in diamond-type crystals the bulk sites symmetry ($T_d$) is preserved by doping while in hexagonal crystals the impurity site moves towards a higher ($T_d$) or lower ($C_{3v}$) symmetry configuration dependently on the valence of the dopant atoms; ii) for Si and Ge, group III impurities can be more easily introduced in the hexagonal-diamond phase, whose local $C_{3v}$ symmetry better accommodates the three-fold coordination of the impurity, while n-type impurities do not reveal any marked phase preference; iii) for C, both n and p dopants are more stable in the hexagonal-diamond structure than in the the cubic one, but this tendency is much more pronounced for n-type impurities.

preprint2014arXiv

Excitons and stacking order in h-BN

The strong excitonic emission at 5.75 eV of hexagonal boron nitride (h-BN) makes this material one of the most promising candidate for light emitting devices in the far ultraviolet (UV). However, single excitons occur only in perfect monocrystals that are extremely hard to synthesize, while regular h-BN samples present a complex emission spectrum with several additional peaks. The microscopic origin of these additional emissions has not yet been understood. In this work we address this problem using an experimental and theoretical approach that combines nanometric resolved cathodoluminescence, high resolution transmission electron microscopy and state of the art theoretical spectroscopy methods. We demonstrate that emission spectra are strongly inhomogeneus within individual flakes and that additional excitons occur at structural deformations, such as faceted plane folds, that lead to local changes of the h-BN stacking order.