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Michael Nolan

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2 published item(s)

preprint2014arXiv

The Design Reference Asteroid for the OSIRIS-REx Mission Target (101955) Bennu

The Design Reference Asteroid (DRA) is a compilation of all that is known about the OSIRIS-REx mission target, asteroid (101955) Bennu. It contains our best knowledge of the properties of Bennu based on an extensive observational campaign that began shortly after its discovery, and has been used to inform mission plan development and flight system design. The DRA will also be compared with post-encounter science results to determine the accuracy of our Earth-based characterization efforts. The extensive observations of Bennu in 1999 has made it one of the best-characterized near-Earth asteroids. Many physical parameters are well determined, and span a number of categories: Orbital, Bulk, Rotational, Radar, Photometric, Spectroscopic, Thermal, Surface Analog, and Environment Properties. Some results described in the DRA have been published in peer-reviewed journals while others have been reviewed by OSIRIS-REx Science Team members and/or external reviewers. Some data, such as Surface Analog Properties, are based on our best knowledge of asteroid surfaces, in particular those of asteroids Eros and Itokawa. This public release of the OSIRIS-REx Design Reference Asteroid is a annotated version of the internal OSIRIS-REx document OREX-DOCS-04.00-00002, Rev 9 (accepted by the OSIRIS-REx project on 2014-April-14). The supplemental data products that accompany the official OSIRIS-REx version of the DRA are not included in this release. We are making this document available as a service to future mission planners in the hope that it will inform their efforts.

preprint2010arXiv

Silicon nanowire band gap modification

Band gap modification for small-diameter (1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory calculations. Because of quantum confinement, small-diameter wires exhibit a direct band gap that increases as the wire diameter narrows, irrespective of surface termination. This effect has been observed in previous experimental and theoretical studies for hydrogenated wires. For a fixed cross-section, the functional group used to saturate the silicon surface significantly modifies the band gap, resulting in relative energy shifts of up to an electronvolt. The band gap shifts are traced to details of the hybridization between the silicon valence band and the frontier orbitals of the terminating group, which is in competition with quantum confinement.