Researcher profile

Md. Asif Afzal

Md. Asif Afzal contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Structural, elastic, bonding, optoelectronic, and some thermo-physical properties of transition metal dichalcogenides ZrX2 (X = S, Se, Te): Insights from ab-initio calculations

Transition metal dichalcogenides (TMDCs) belong to technologically important compounds. We have explored the structural, elastic, bonding, optoelectronic and some thermo-physical properties of ZrX2 (X = S, Se, Te) TMDCs in details via ab-initio technique in this study. Elastic anisotropy indices, atomic bonding character, optoelectronic properties and thermo-physical parameters including melting temperature and minimum phonon thermal conductivity are investigated for the first time. All the TMDCs under investigation possess significant elastic anisotropy and layered structural features. ZrX2 (X = S, Se, Te) compounds are fairly machinable, and ZrS2 and ZrSe2 are moderately hard. ZrTe2, on the other hand, is significantly softer. Both covalent and ionic bondings contribute in the crystals. Electronic band structure calculations display semiconducting behavior for ZrS2 and ZrSe2 and metallic behavior for ZrTe2. Energy dependent optoelectronic parameters exhibit good correspondence with the underlying electronic energy density of states features. ZrX2 (X = S, Se, Te) compounds absorb ultraviolet radiation effectively. The reflectivity spectrum, R(w), remains over 50% in the energy range from 0 eV to 20 eV for ZrTe2. Therefore, this TMDC has wide band and nonselective high reflectivity and can be used as an efficient reflector to reduce solar heating. Debye temperature, melting point and minimum phonon thermal conductivity of the compounds under study are low and show excellent correspondence with each other and also with the elastic and bonding characteristics.

preprint2020arXiv

A DFT based first-principles investigation of the physical properties of Bi2Te2Se topological insulator

A topological insulator possesses a bulk energy gap splitting the lowest empty band from the highest occupied electronic band. The electronic states at the surface (or edge in two dimensions), on the other hand, of a topological insulator are gapless and are protected by the time reversal symmetry. Such systems are promising for variety of optoelectronic, superconducting, thermoelectric and quantum computation related applications. We have studied elastic, mechanical, electronic, optical properties, bonding character and the electronic charge density distribution of ternary Bi2Te2Se topological insulator. The compound under study is mechanically stable and elastically anisotropic. The electronic band structure calculations reveal high degree of anisotropy in the energy dispersion. Electronic effective mass is high in the c-direction compared to that in the ab-plane. The optical constants show moderate level of variation with respect to the polarization of the electric field of the incident radiation. The optical spectra are consistent with the electronic band structure and electronic density of states features. Both electronic band structure and optical constants show clear indications of a direct band gap of 0.610 eV for Bi2Te2Se. It is also found that Bi2Te2Se possesses high refractive index at low photon energies in the infrared and visible region. It has low reflectivity in the ultraviolet region. Bi2Te2Se absorbs photons strongly in the ultraviolet energies. All these features make Bi2Te2Se suitable for diverse class of optoelectronic device applications.