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Maximilian Russ

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cond-mat.mes-hall quant-ph

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preprint2021arXiv

Computing with spin qubits at the surface code error threshold

High-fidelity control of quantum bits is paramount for the reliable execution of quantum algorithms and for achieving fault-tolerance, the ability to correct errors faster than they occur. The central requirement for fault-tolerance is expressed in terms of an error threshold. Whereas the actual threshold depends on many details, a common target is the ~1% error threshold of the well-known surface code. Reaching two-qubit gate fidelities above 99% has been a long-standing major goal for semiconductor spin qubits. These qubits are well positioned for scaling as they can leverage advanced semiconductor technology. Here we report a spin-based quantum processor in silicon with single- and two-qubit gate fidelities all above 99.5%, extracted from gate set tomography. The average single-qubit gate fidelities remain above 99% when including crosstalk and idling errors on the neighboring qubit. Utilizing this high-fidelity gate set, we execute the demanding task of calculating molecular ground state energies using a variational quantum eigensolver algorithm. Now that the 99% barrier for the two-qubit gate fidelity has been surpassed, semiconductor qubits have gained credibility as a leading platform, not only for scaling but also for high-fidelity control.

preprint2019arXiv

Theory of valley-resolved spectroscopy of a Si triple quantum dot coupled to a microwave resonator

We theoretically study a silicon triple quantum dot (TQD) system coupled to a superconducting microwave resonator. The response signal of an injected probe signal can be used to extract information about the level structure by measuring the transmission and phase shift of the output field. This information can further be used to gain knowledge about the valley splittings and valley phases in the individual dots. Since relevant valley states are typically split by several $μ\text{eV}$, a finite temperature or an applied external bias voltage is required to populate energetically excited states. The theoretical methods in this paper include a capacitor model to fit experimental charging energies, an extended Hubbard model to describe the tunneling dynamics, a rate equation model to find the occupation probabilities, and an input-output model to determine the response signal of the resonator.

preprint2016arXiv

Coupling of three-spin qubits to their electric environment

We investigate the behavior of qubits consisting of three electron spins in double and triple quantum dots subject to external electric fields. Our model includes two independent bias parameters, $\varepsilon$ and $\varepsilon_{M}$, which both couple to external electromagnetic fields and can be controlled by gate voltages applied to the quantum dot structures. By varying these parameters one can switch the qubit type by shifting the energies in the single quantum dots thus changing the electron occupancy in each dot. Starting from the asymmetric resonant (ARX) exchange qubit with a (2,0,1) and (1,0,2) charge admixture one can smoothly cross over to the resonant exchange (RX) qubit with a detuned (1,1,1) charge configuration, and to the exchange-only (EO) qubit with the same charge configuration but equal energy levels down to the hybrid qubits with (1,2,0) and (0,2,1) charge configurations. Here, ($l,m,n$) describes a configuration with $l$ electrons in the left dot, $m$ electrons in the center dot, and $n$ electrons in the right dot. We first focus on random electromagnetic field fluctuations, i.e., "charge noise", at each quantum dot resulting in dephasing of the qubit and provide a complete map of the resulting dephasing time as a function of the bias parameters. We pay special attention to the so-called sweet spots and double sweet spots of the system which are least susceptible to noise. In the second part we investigate the coupling of the qubit system to the coherent quantized electromagnetic field in a superconducting strip-line cavity and also provide a complete map of the coupling strength as a function of the bias parameters. We analyze the asymmetric qubit-cavity coupling via $\varepsilon$ and the symmetric coupling via $\varepsilon_{M}$.

preprint2015arXiv

Long distance coupling of resonant exchange qubits

We investigate the effectiveness of a microwave cavity as a mediator of interactions between two resonant exchange (RX) qubits in semiconductor quantum dots (QDs) over long distances, limited only by the extension of the cavity. Our interaction model includes the orthonormalized Wannier orbitals constructed from Fock-Darwin states under the assumption of a harmonic QD confinement potential. We calculate the qubit-cavity coupling strength in a Jaynes Cummings Hamiltonian, and find that dipole transitions between two states with an asymmetric charge configuration constitute the relevant RX quoit-cavity coupling mechanism. The effective coupling between two RX qubits in a shared cavity yields a universal two-qubit iSWAP-gate with gate times on the order of nanoseconds over distances on the order of up to a millimeter.

preprint2015arXiv

The asymmetric resonant exchange qubit under the influence of electrical noise

We investigate the influence of electrical charge noise on a resonant exchange (RX) qubit in a triple quantum dot. This RX qubit is a variation of the exchange-only spin qubit which responds to a narrow-band resonant frequency. Our noise model includes uncorrelated charge noise in each quantum dot giving rise to two independent (noisy) bias parameters $\varepsilon$ and $Δ$. We calculate the energy splitting of the two qubit states as a function of these two bias detuning parameters to find "sweet spots", where the qubit is least susceptible to noise. Our investigation shows that such sweet spots exist within the low bias regime, in which the bias detuning parameters have the same magnitude as the hopping parameters. The location of the sweet spots in the $(\varepsilon,Δ)$ plane depends on the hopping strength and asymmetry between the quantum dots. In the regime of weak charge noise, we identify a new favorable operating regime for the RX qubit based on these sweet spots.

preprint2014arXiv

Hybrid spin and valley quantum computing with singlet-triplet qubits

The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over the valley state opens new possibilities for quantum information processing. Combining qubits encoded in the singlet-triplet subspace of spin and valley states allows for universal QC using a universal two-qubit gate directly provided by the exchange interaction. We show how spin and valley qubits can be separated in order to allow for single-qubit rotations.