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Matthew J. Stolt

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Published work

3 published item(s)

preprint2022arXiv

Disentangling magnetic and grain contrast in polycrystalline FeGe thin films using four-dimensional Lorentz scanning transmission electron microscopy

The study of nanoscale chiral magnetic order in polycrystalline materials with a strong Dzyaloshinkii-Moriya interaction (DMI) is interesting for the observation of magnetic phenomena at grain boundaries and interfaces. One such material is sputter-deposited B20 FeGe on Si, which has been actively investigated as the basis for low-power, high-density magnetic memory technology in a scalable material platform. Although conventional Lorentz electron microscopy provides the requisite spatial resolution to probe chiral magnetic textures in single-crystal FeGe, probing the magnetism of sputtered B20 FeGe is more challenging because the sub-micron crystal grains add confounding contrast. We address the challenge of disentangling magnetic and grain contrast by applying 4-dimensional Lorentz scanning transmission electron microscopy using an electron microscope pixel array detector. Supported by analytical and numerical models, we find that the most important parameter for imaging magnetic materials with polycrystalline grains is the ability for the detector to sustain large electron doses, where having a high-dynamic range detector becomes extremely important. Despite the small grain size in sputtered B20 FeGe on Si, using this approach we are still able to observe helicity switching of skyrmions and magnetic helices across two adjacent grains as they thread through neighboring grains. We reproduce this effect using micromagnetic simulations by assuming that the grains have distinct orientation and magnetic chirality and find that magnetic helicity couples to crystal chirality. Our methodology for imaging magnetic textures is applicable to other thin-film magnets used for spintronics and memory applications, where an understanding of how magnetic order is accommodated in polycrystalline materials is important.

preprint2015arXiv

Current-Driven Dynamics of Skyrmions Stabilized in MnSi Nanowires Revealed by Topological Hall Effect

Skyrmions, novel topologically stable spin vortices, hold promise for next-generation magnetic storage due to their nanoscale domains to enable high information storage density and their low threshold for current-driven motion to enable ultralow energy consumption. One-dimensional (1D) nanowires are ideal hosts for skyrmions since they not only serve as a natural platform for magnetic racetrack memory devices but also can potentially stabilize skyrmions. Here we use the topological Hall effect (THE) to study the phase stability and current-driven dynamics of the skyrmions in MnSi nanowires. The THE was observed in an extended magnetic field-temperature window (15 to 30 K), suggesting stabilization of skyrmion phase in nanowires compared with the bulk (27 to 29.5 K). Furthermore, for the first time, we study skyrmion dynamics in this extended skyrmion phase region and found that under the high current-density of $10^{8}-10^{9} Am^{-2}$ enabled by nanowire geometry, the THE decreases with increasing current densities, which demonstrates the current-driven motion of skyrmions generating the emergent electric field. These results open up the exploration of nanowires as an attractive platform for investigating skyrmion physics in 1D systems and exploiting skyrmions in magnetic storage concepts.

preprint2015arXiv

Electrical Probing of Field-Driven Cascading Quantized Transitions of Skyrmion Cluster States in MnSi Nanowires

Magnetic skyrmions are topologically stable whirlpool-like spin textures that offer great promise as information carriers for future ultra-dense memory and logic devices1-4. To enable such applications, particular attention has been focused on the skyrmions properties in highly confined geometry such as one dimensional nanowires5-8. Hitherto it is still experimentally unclear what happens when the width of the nanowire is comparable to that of a single skyrmion. Here we report the experimental demonstration of such scheme, where magnetic field-driven skyrmion cluster (SC) states with small numbers of skyrmions were demonstrated to exist on the cross-sections of ultra-narrow single-crystal MnSi nanowires (NWs) with diameters, comparable to the skyrmion lattice constant (18 nm). In contrast to the skyrmion lattice in bulk MnSi samples, the skyrmion clusters lead to anomalous magnetoresistance (MR) behavior measured under magnetic field parallel to the NW long axis, where quantized jumps in MR are observed and directly associated with the change of the skyrmion number in the cluster, which is supported by Monte Carlo simulations. These jumps show the key difference between the clustering and crystalline states of skyrmions, and lay a solid foundation to realize skyrmion-based memory devices that the number of skyrmions can be counted via conventional electrical measurements.