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Researcher profile

Matteo Franchin

Matteo Franchin contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2013arXiv

Thermally excited spin waves in a nano-structure: thermal gradient vs. constant temperature

Using micromagnetic simulations, we have investigated spin dynamics in a nanostructure in the presence of thermal fluctuations. In particular, we have studied the effects of a uniform temperature and of a uniform thermal gradient. In both cases, the stochastic field leads to an increase of the precession angle of the magnetization, and to a mild decreas of the linewidth of the resonance peaks. Our results indicate that the Gilbert damping parameter plays the role of control parameter for the amplification of spin waves.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Enhanced spin transfer torque effect for transverse domain walls in cylindrical nanowires

Recent studies have predicted extraordinary properties for transverse domain walls in cylindrical nanowires: zero depinning current, the absence of the Walker breakdown, and applications as domain wall oscillators. In order to reliably control the domain wall motion, it is important to understand how they interact with energy barriers. In this paper, we study the motion and depinning of transverse domain walls through potential barriers in ferromagnetic cylindrical nanowires. We use magnetic fields and spin-polarized currents to drive the domain walls along the wire. Using magnetic fields, we find that the minimum and the maximum fields required to push the domain wall through the barrier differ by 30 %. On the contrary, using spin-polarized currents, we find variations of a factor 130 between the minimum value of the depinning current density and the maximum value. We study the depinning current density as a function of the height of the energy barrier using numerical and analytical methods. We find that, for a barrier of 40 k_B T, a depinning current density of about 5 uA is sufficient to depin the domain wall. We reveal and explain the mechanism that leads to these unusually low depinning currents. One requirement for this new depinning mechanism is for the domain wall to be able to rotate around its own axis. With the right barrier design, the spin torque transfer term is acting exactly against the damping in the micromagnetic system, and thus the low current density is sufficient to accumulate enough energy quickly. These key insights may be crucial in furthering the development of novel memory technologies, such as the racetrack memory, that can be controlled through low current densities.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Joule heating in nanowires

We study the effect of Joule heating from electric currents flowing through ferromagnetic nanowires on the temperature of the nanowires and on the temperature of the substrate on which the nanowires are grown. The spatial current density distribution, the associated heat generation, and diffusion of heat is simulated within the nanowire and the substrate. We study several different nanowire and constriction geometries as well as different substrates: (thin) silicon nitride membranes, (thick) silicon wafers, and (thick) diamond wafers. The spatially resolved increase in temperature as a function of time is computed. For effectively three-dimensional substrates (where the substrate thickness greatly exceeds the nanowire length), we identify three different regimes of heat propagation through the substrate: regime (i), where the nanowire temperature increases approximately logarithmically as a function of time. In this regime, the nanowire temperature is well-described analytically by You et al. [APL 89, 222513 (2006)]. We provide an analytical expression for the time t_c that marks the upper applicability limit of the You model. After t_c, the heat flow enters regime (ii), where the nanowire temperature stays constant while a hemispherical heat front carries the heat away from the wire and into the substrate. As the heat front reaches the boundary of the substrate, regime (iii) is entered where the nanowire and substrate temperature start to increase rapidly. For effectively two-dimensional substrates (where the nanowire length greatly exceeds the substrate thickness), there is only one regime in which the temperature increases logarithmically with time for large times, before the heat front reaches the substrate boundary. We provide an analytical expression, valid for all pulse durations, that allows one to accurately compute this temperature increase in the nanowire on thin substrates.

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