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Mathias B. Steiner

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3 published item(s)

preprint2022arXiv

AI powered, automated discovery of polymer membranes for carbon capture

The generation of molecules with Artificial Intelligence (AI) is poised to revolutionize materials discovery. Potential applications range from development of potent drugs to efficient carbon capture and separation technologies. However, existing computational frameworks lack automated training data creation and physical performance validation at meso-scale where complex properties of amorphous materials emerge. The methodological gaps have so far limited AI design to small-molecule applications. Here, we report the first automated discovery of complex materials through inverse molecular design which is informed by meso-scale target features and process figures-of-merit. We have entered the new discovery regime by computationally generating and validating hundreds of polymer candidates designed for application in post-combustion carbon dioxide filtration. Specifically, we have validated each discovery step, from training dataset creation, via graph-based generative design of optimized monomer units, to molecular dynamics simulation of gas permeation through the polymer membranes. For the latter, we have devised a Representative Elementary Volume (REV) enabling permeability simulations at about 1,000x the volume of an individual, AI-generated monomer, obtaining quantitative agreement. The discovery-to-validation time per polymer candidate is on the order of 100 hours in a standard computing environment, offering a computational screening alternative prior to lab validation.

preprint2020arXiv

Effects of additives on oil displacement in nanocapillaries: a mesoscale simulation study

We performed mesoscale simulations in order to investigate the effects that additives, such as surfactants and polymers, have in the oil displacement process by water and brine injection. A Many-Body Dissipative Particle Dynamics (MDPD) model was parameterized in order to reproduce physical properties obtained either by experiments or Classical Molecular Dynamics (MD). The MDPD model was then employed to simulate the displacement of n-dodecane by water and brine, with surfactant concentrations ranging from 1 wt. % to 10 wt. % SDS and polymer concentration of 0.5 wt. % HPAM. We observed that while the additives may enter the capillary without clogging, specific combinations of surfactant concentrations and injection rates may lead to poor oil displacement. This result can be understood in terms of the balance between water-wall and (surface-mediated) water-oil interactions. As a consequence, our results show an effective reversal of the wettability character, from water-wet to oil-wet, as a function of the interface speed. We conclude by summarizing the implications such results have on the fluid-fluid displacements involving additives.

preprint2011arXiv

Ultimate RF Performance Potential of Carbon Electronics

Carbon electronics based on carbon nanotube array field-effect transistors (AFETs) and 2-dimensional graphene field-effect transistors (GFETs) have recently attracted significant attention for potential RF applications. Here, we explore the ultimate RF performance potential for these two unique devices using semi-classical ballistic transport simulations. It is shown that the intrinsic current-gain and power-gain cutoff frequencies (fT and fMAX) above 1 THz should be possible in both AFETs and GFETs. Thus, both devices could deliver higher cut-off frequencies than traditional semiconductors such as Si and III-V's. In the case of AFETs, we show that their RF operation is not sensitive to the diameter variation of semiconducting tubes and the presence of metallic tubes in the channel. The ultimate fT and fMAX values in AFETs are observed to be higher than that in GFETs. The optimum device biasing conditions for AFETs require smaller biasing currents, and thus, lower power dissipation compared to GFETs. The degradation in high-frequency performance in the presence of external parasitics is also seen to be lower in AFETs compared to GFETs.