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Researcher profile

Massimo Macucci

Massimo Macucci contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-halleess.SYmath-phmath.MPphysics.chem-phquant-phSystems and Control

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Published work

6 published item(s)

preprint2021arXiv

Revisiting the Memristor Concept within Basic Circuit Theory

In this paper we revisit the memristor concept within circuit theory. We start from the definition of the basic circuit elements, then we introduce the original formulation of the memristor concept and summarize some of the controversies on its nature. We also point out the ambiguities resulting from a non rigorous usage of the flux linkage concept. After concluding that the memristor is not a fourth basic circuit element, prompted by recent claims in the memristor literature, we look into the application of the memristor concept to electrophysiology, realizing that an approach suitable to explain the observed inductive behavior of the giant squid axon had already been developed in the 1960s, with the introduction of "time-variant resistors." We also discuss a recent memristor implementation in which the magnetic flux plays a direct role, concluding that it cannot strictly qualify as a memristor, because its $v-i$ curve cannot exactly pinch at the origin. Finally, we present numerical simulations of a few memristors and memristive systems, focusing on the behavior in the $φ-q$ plane. We show that, contrary to what happens for the most basic memristor concept, for general memristive systems the $φ-q$ curve is not single-valued or not even closed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The k.p method and its application to graphene, carbon nanotubes and graphene nanoribbons: the Dirac equation

The k.p method is a semi-empirical approach which allows to extrapolate the band structure of materials from the knowledge of a restricted set of parameters evaluated in correspondence of a single point of the reciprocal space. In the first part of this review article we give a general description of this method, both in the case of homogeneous crystals (where we consider a formulation based on the standard perturbation theory, and Kane's approach) and in the case of non-periodic systems (where, following Luttinger and Kohn, we describe the single-band and multi-band envelope function method and its application to heterostructures). The following part of our review is completely devoted to the application of the k.p method to graphene and graphene-related materials. Following Ando's approach, we show how the application of this method to graphene results in a description of its properties in terms of the Dirac equation. Then we find general expressions for the probability density and the probability current density in graphene and we compare this formulation with alternative existing representations. Finally, applying proper boundary conditions, we extend the treatment to carbon nanotubes and graphene nanoribbons, recovering their fundamental electronic properties.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Atomistic Boron-Doped Graphene Field Effect Transistors: A Route towards Unipolar Characteristics

We report fully quantum simulations of realistic models of boron-doped graphene-based field effect transistors, including atomistic details based on DFT calculations. We show that the self-consistent solution of the three-dimensional (3D) Poisson and Schrödinger equations with a representation in terms of a tight-binding Hamiltonian manages to accurately reproduce the DFT results for an isolated boron-doped graphene nanoribbon. Using a 3D Poisson/Schrödinger solver within the Non-Equilibrium Green's Functions (NEGF) formalism, self-consistent calculations of the gate-screened scattering potentials induced by the boron impurities have been performed, allowing the theoretical exploration of the tunability of transistor characteristics. The boron-doped graphene transistors are found to approach unipolar behavior as the boron concentration is increased, and by tuning the density of chemical dopants the electron-hole transport asymmetry can be finely adjusted. Correspondingly, the onset of a mobility gap in the device is observed. Although the computed asymmetries are not sufficient to warrant proper device operation, our results represent an initial step in the direction of improved transfer characteristics and, in particular, the developed simulation strategy is a powerful new tool for modeling doped graphene nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Effect of potential fluctuations on shot noise suppression in mesoscopic cavities

We perform a numerical investigation of the effect of the disorder associated with randomly located impurities on shot noise in mesoscopic cavities. We show that such a disorder becomes dominant in determining the noise behavior when the amplitude of the potential fluctuations is comparable to the value of the Fermi energy and for a large enough density of impurities. In contrast to existing conjectures, random potential fluctuations are shown not to contribute to achieving the chaotic regime whose signature is a Fano factor of 1/4, but, rather, to the diffusive behavior typical of disordered conductors. In particular, the 1/4 suppression factor expected for a symmetric cavity can be achieved only in high-quality material, with a very low density of impurities. As the disorder strength is increased, a relatively rapid transition of the suppression factor from 1/4 to values typical of diffusive or quasi-diffusive transport is observed. Finally, on the basis of a comparison between a hard-wall and a realistic model of the cavity, we conclude that the specific details of the confinement potential have a minor influence on noise.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Is the regime with shot noise suppression by a factor 1/3 achievable in semiconductor devices with mesoscopic dimensions?

We discuss the possibility of diffusive conduction and thus of suppression of shot noise by a factor 1/3 in mesoscopic semiconductor devices with two-dimensional and one-dimensional potential disorder, for which existing experimental results do not provide a conclusive result. On the basis of our numerical analysis, we conclude that it is quite difficult to achieve diffusive transport over a reasonably wide parameter range, unless the device dimensions are increased up to the macroscopic scale. In addition, in the case of one-dimensional disorder, some mechanism capable of mode-mixing has to be present in order to reach or even approach the diffusive regime.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Armchair graphene nanoribbons: PT-symmetry breaking and exceptional points without dissipation

We consider a single layer graphene nanoribbon with armchair edges in a longitudinally constant external potential and point out that its transport properties can be described by means of an effective non-Hermitian Hamiltonian. We show that this system has some features typical of dissipative systems, namely the presence of exceptional points and of PT-symmetry breaking, although it is not dissipative.

0 citations0 reviewsNo code linkedOpen access