Researcher profile

Masato Hamada

Masato Hamada contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Conversion between electron spin and microscopic atomic rotation

We theoretically investigate the microscopic mechanism of conversion between the electron spin and the microscopic local rotation of atoms in crystals. In phonon modes with angular momenta, the atoms microscopically rotate around their equilibrium positions in crystals. In a simple toy model with phonons, we calculate the spin expectation value by using the adiabatic series expansion. We show that the time-averaged spin magnetization is generated by the microscopic local rotation of atoms via the spin-orbit interaction. On the other hand, in the system with a simple vibration of atoms, time-averaged spin magnetization becomes zero due to the time-reversal symmetry. Moreover, the magnitude of the time-averaged spin magnetization depends on the inverse of the difference of instantaneous eigenenergy, and we show that it becomes smaller in band insulators with a larger gap.

preprint2020arXiv

Phonon rotoelectric effect

In crystals with time-reversal symmetry but without inversion symmetry, the phonon angular momentum can be generated by the temperature gradient, and it is called phonon thermal Edelstein effect. On the other hand, when both symmetries are broken and their product is conserved, the phonon angular momentum for any phonon modes at any wave vectors vanishes, and the phonon thermal Edelstein effect does not occur. In this paper, we propose another mechanism of generation of the phonon angular momentum. We show that in such crystals the electric field generates the phonon angular momentum, via the lattice distortion due to the electric field. This effect is in the same symmetry class with the magnetoelectric effect, and we call this effect phonon rotoelectric effect. We discuss the temperature dependence of the phonon angular momentum generated by the temperature gradient and by the electric field in the high- and the low-temperature limits.