Researcher profile

Masashi Morishita

Masashi Morishita contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Fluidity in Domain Walls in Dilute $^3$He-$^4$He Films on Graphite: Possible 1D Fermi Fluid and Dirac Fermions in Helium Film

The heat capacity of a small amount of $^3$He atoms dissolved in submonolayer $^4$He film has been measured. The measured heat capacity is finite and suggests that $^3$He atoms are mobile at an areal density regime higher than that of the $\sqrt{3}\times\sqrt{3}$ phase, where $^4$He films are believed to be solid. At higher areal densities, the measured heat capacity is proportional to $T^2$ and depends on the amounts of $^3$He atoms. These behaviors are anomalous to that of a two-dimensional Fermi fluid, and cannot be explained by uniform melting of $^4$He films. One possible explanation for these anomalous behaviors is that helium atoms exhibit fluidity only inside the domain walls of the adsorption structure, and the dissolved $^3$He atoms gather into them and behave as a one-dimensional Fermi fluid or as Dirac fermions, depending on the structure of the domain walls. The behaviors of the measured heat capacity strongly suggest this possibility.

preprint2001arXiv

Magetoresistance of RuO_2-based resistance thermometers below 0.3 K

We have determined the magnetoresistance of RuO_2-based resistors (Scientific Instruments RO-600) between 0.05 K and 0.3 K in magnetic fields up to 8 T. The magnetoresistance is negative around 0.5 T and then becomes positive at larger fields. The magnitude of the negative magnetoresistance increases rapidly as the temperature is lowered, while that of the positive magnetoresistance has smaller temperature dependence. We have also examined the temperature dependence of the resistance below 50 mK in zero magnetic field. It is described in the context of variable-range-hopping conduction down to 15 mK. Hence, the resistors can be used as thermometers down to at least 15 mK.