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Masashi Morishita

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2 publications

preprint2022arXiv

Fluidity in Domain Walls in Dilute 3^3He-4^4He Films on Graphite: Possible 1D Fermi Fluid and Dirac Fermions in Helium Film

The heat capacity of a small amount of 3^3He atoms dissolved in submonolayer 4^4He film has been measured. The measured heat capacity is finite and suggests that 3^3He atoms are mobile at an areal density regime higher than that of the 3×3\sqrt{3}\times\sqrt{3} phase, where 4^4He films are believed to be solid. At higher areal densities, the measured heat capacity is proportional to T2T^2 and depends on the amounts of 3^3He atoms. These behaviors are anomalous to that of a two-dimensional Fermi fluid, and cannot be explained by uniform melting of 4^4He films. One possible explanation for these anomalous behaviors is that helium atoms exhibit fluidity only inside the domain walls of the adsorption structure, and the dissolved 3^3He atoms gather into them and behave as a one-dimensional Fermi fluid or as Dirac fermions, depending on the structure of the domain walls. The behaviors of the measured heat capacity strongly suggest this possibility.

preprint2001arXiv

Magetoresistance of RuO_2-based resistance thermometers below 0.3 K

We have determined the magnetoresistance of RuO_2-based resistors (Scientific Instruments RO-600) between 0.05 K and 0.3 K in magnetic fields up to 8 T. The magnetoresistance is negative around 0.5 T and then becomes positive at larger fields. The magnitude of the negative magnetoresistance increases rapidly as the temperature is lowered, while that of the positive magnetoresistance has smaller temperature dependence. We have also examined the temperature dependence of the resistance below 50 mK in zero magnetic field. It is described in the context of variable-range-hopping conduction down to 15 mK. Hence, the resistors can be used as thermometers down to at least 15 mK.

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